MT46V64M8BN-5B:F TR

The MT46V64M8BN-5B:F TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball TFBGA (10 mm × 12.5 mm) package. It implements a double-data-rate architecture with internal DLL and source-synchronous DQS signaling for two data transfers per clock cycle.

Designed for systems requiring compact parallel DDR memory, this device targets commercial-temperature applications and provides standard DDR latency/timing options, integrated refresh support and a 2.5 V I/O operating range for SSTL_2-compatible designs.

Key Features

• Core DDR Architecture Internal pipelined double-data-rate (DDR) operation with two data accesses per clock cycle and an on-die DLL to align data and strobe timing.
• Memory Organization & Density 512 Mbit capacity organized as 64M × 8 with four internal banks to support concurrent bank operations.
• Performance & Timing Rated clock frequency up to 200 MHz (speed grade -5B), with an access time of 700 ps and programmable burst lengths of 2, 4, or 8.
• Data Strobe & Masking Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture and a data mask (DM) to mask write data.
• Refresh & Self-Refresh Supports auto refresh (8K refresh cycles) and self-refresh (self-refresh options noted in datasheet); commercial refresh timing specified in the datasheet.
• Interface & I/O Differential clock inputs (CK, CK#) and 2.5 V I/O (SSTL_2 compatible) with VDD/VDDQ options detailed in the datasheet.
• Package & Mounting 60-ball FBGA package (10 mm × 12.5 mm) optimized for board-level mounting in compact designs.
• Operating Temperature Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• Board-level DDR memory — Use as parallel DDR SDRAM memory on system PCBs where 512 Mbit density and 2.5 V I/O are required.
• Compact embedded modules — Small 60-ball FBGA footprint for space-constrained designs needing standard DDR interface and burst access.
• Legacy DDR platform support — Suitable for systems designed around DDR timing grades up to the -5B (200 MHz) speed grade.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle improve effective memory bandwidth without increasing clock rate.
• Source-synchronous DQS support: Bidirectional DQS and DLL alignment simplify timing closure for read and write operations.
• Configurable burst lengths: Programmable burst lengths (2, 4, 8) enable flexible data transfer sizing for different access patterns.
• Standard 2.5 V I/O: VDD/VDDQ options and SSTL_2-compatible I/O support integration with existing 2.5 V signaling domains.
• Compact FBGA package: 60-ball (10×12.5 mm) FBGA minimizes board area while providing a standard BGA mounting form factor.
• Commercial temperature rating: Specified operation from 0°C to +70°C for commercial-grade applications.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8BN-5B:F TR combines a 512 Mbit DDR architecture with source-synchronous DQS, on-die DLL and four internal banks to deliver predictable DDR performance in a compact 60-ball FBGA package. Its 2.5 V I/O compatibility and programmable burst options make it suitable for designers implementing parallel DDR memory on space-constrained boards.

This device is targeted at commercial-temperature systems that require standard DDR timing grades (including the -5B speed grade) and integrated refresh mechanisms. It is a fit for designs that prioritize a small footprint, established DDR signaling, and clear timing characteristics documented in the datasheet.

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