MT46V64M8BN-6 L:F

The MT46V64M8BN-6 L:F is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA (10 × 12.5 mm) package. It implements a double-data-rate architecture with internal DLL and four internal banks to deliver two data accesses per clock cycle.

This device targets designs that require compact, board-level DDR memory with a commercial operating temperature range and low-voltage operation for integration into systems constrained by space and power.

Key Features

• Core / Architecture Internal, pipelined DDR architecture with two data accesses per clock cycle and an internal DLL to align DQ and DQS transitions with CK.
• Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks).
• Performance & Timing Rated clock frequency up to 167 MHz (CL = 2.5 speed grade), access time 700 ps, and programmable burst lengths of 2, 4, or 8.
• Data Integrity & Strobing Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS is edge-aligned for READs and center-aligned for WRITEs. Data mask (DM) provided for masking write data.
• Interface & Commands Differential clock inputs (CK, CK#) with commands entered on each positive CK edge; parallel memory interface.
• Refresh & Power Auto-refresh support with 64 ms, 8192-cycle refresh interval; VDD / VDDQ supply range 2.3 V to 2.7 V.
• Package & Temperature 60-TFBGA / 60-ball FBGA (10 × 12.5 mm) package; commercial operating temperature 0°C to +70°C (TA).
• Write / Read Controls Concurrent auto precharge option supported and data mask capability for write control.

Typical Applications

• Board-level DDR memory — For systems requiring a 512 Mbit DDR SDRAM in a compact 60-ball FBGA (10 × 12.5 mm) package.
• Compact module designs — Suits designs that need 64M × 8 organization and a parallel DDR interface for board layout and density constraints.
• Timing-sensitive buffering — DDR architecture with 167 MHz clock capability and internal DQS/DLL support for source-synchronous data capture.

Unique Advantages

• DDR double-data-rate operation: Two data accesses per clock cycle increase effective throughput relative to single-data-rate memories.
• Low-voltage supply: VDD/VDDQ range of 2.3 V–2.7 V supports lower-power system designs.
• Compact FBGA package: 60-ball FBGA (10 × 12.5 mm) minimizes board footprint for space-constrained applications.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and CL options enable tuning for system timing and throughput.
• Robust data strobing: Bidirectional DQS with DLL alignment and DM write masking support reliable source-synchronous data capture and controlled writes.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8BN-6 L:F delivers a compact, commercial-grade 512 Mbit DDR SDRAM solution with a 64M × 8 organization, internal DLL, and four-bank architecture for concurrent operation. Its combination of DDR performance, low-voltage operation (2.3 V–2.7 V), and a 60-ball FBGA footprint makes it suitable for board-level designs that require moderate density DDR memory with predictable timing characteristics.

This device is well suited for designers seeking a straightforward, verifiable DDR memory component with defined timing parameters (167 MHz rating, 700 ps access time) and commercial temperature support (0°C to +70°C), enabling clear integration planning and long-term design consistency.

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