MT46V64M8BN-6 IT:F TR

The MT46V64M8BN-6 IT:F TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined double-data-rate architecture with source-synchronous data capture to deliver two data transfers per clock cycle.

Designed for systems that require compact, high-speed parallel DDR memory, this device targets applications needing a 2.3 V–2.7 V supply range, a 167 MHz clock rate (speed grade -6), and industrial temperature operation from -40°C to +85°C.

Key Features

• Core / Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and differential clock inputs (CK, CK#).
• Memory Capacity & Organization 512 Mbit total capacity, organized as 64M × 8 with four internal banks for concurrent operation.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data (source-synchronous); DQS edge-aligned for READs and center-aligned for WRITEs. Supports programmable burst lengths of 2, 4, or 8.
• Performance Rated for a 167 MHz clock frequency (speed grade -6) with an access window and data-out timing consistent with DDR operation; typical access-time parameter listed as 700 ps.
• Power Operates from a 2.3 V to 2.7 V supply (VDD/VDDQ nominally 2.5 V ±0.2 V for standard grades).
• Refresh and Reliability Supports auto-refresh (8K refresh cycles), and self-refresh options as defined in the device family documentation.
• Package 60-ball thin FBGA (10 mm × 12.5 mm) package (60-TFBGA) for compact board-level integration and BGA assembly.
• Operating Temperature Industrial operating range: -40°C to +85°C (TA).
• Write / Cycle Timing Word/page write cycle time specified at 15 ns for system timing considerations.

Typical Applications

• PC/Legacy DDR systems (PC3200 / PC2700 / PC2100) Device timing definitions and speed-grade options align with common DDR speed grades referenced for PC3200, PC2700 and PC2100 systems.
• Industrial embedded systems Industrial temperature rating (-40°C to +85°C) supports deployments where extended ambient ranges are required.
• Compact, space-constrained designs The 60-ball FBGA (10 × 12.5 mm) footprint enables dense board layouts that require parallel DDR memory in a small package.

Unique Advantages

• Parallel DDR performance: Two data transfers per clock cycle and source-synchronous DQS improve timing margin for high-rate parallel data paths.
• Flexible timing options: Multiple speed-grade and CAS latency options in the device family let designers match performance requirements (e.g., CL = 2, 2.5, 3 as applicable to speed grade).
• Compact FBGA packaging: 60-ball FBGA (10 mm × 12.5 mm) provides a small footprint for board-level space savings while retaining full DDR functionality.
• Industrial temperature support: Specified operation from -40°C to +85°C enables use in environments with wide temperature swings.
• Standard DDR power envelope: 2.3 V–2.7 V supply compatibility aligns with standard 2.5 V DDR system rails for straightforward power integration.
• Concurrent bank operation: Four internal banks enable better throughput for interleaved access patterns.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8BN-6 IT:F TR delivers a 512 Mbit DDR SDRAM solution in a compact 60-ball FBGA package with industrial temperature capability and a 2.3 V–2.7 V supply window. Its pipelined DDR architecture, source-synchronous DQS, and four-bank organization provide the timing control and concurrency needed for parallel DDR memory implementations.

This Micron device is suitable for designs that require a small-footprint, parallel DDR memory component with documented timing grades and refresh behavior. It is supported by Micron’s device documentation and datasheet detailing timing, electrical, and package specifications for integration planning and system validation.

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