MT46V64M8BN-6:D TR
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 50 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8BN-6:D TR – IC DRAM 512MBIT PAR 60FBGA
The MT46V64M8BN-6:D TR is a 512 Mbit DDR SDRAM organized as 64M x 8 in a 60-TFBGA package. It provides volatile, parallel DRAM storage with defined performance and electrical characteristics for system integration.
Key device characteristics include a 167 MHz clock frequency, 700 ps access time, and a supply voltage range of 2.3V to 2.7V, making it suitable where a compact, specified DDR memory component is required.
Key Features
- Memory Type & Format DDR SDRAM; volatile DRAM organized as 64M x 8 for a total capacity of 512 Mbit.
- Performance Clock frequency of 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns for defined timing behavior.
- Interface Parallel memory interface supporting standard parallel DRAM connectivity.
- Power Operating supply voltage range of 2.3V to 2.7V to match target system rail requirements.
- Package & Mechanical Supplied in a 60-TFBGA package (supplier device package listed as 60-FBGA (10x12.5)).
- Operating Conditions Specified operating ambient temperature range of 0°C ~ 70°C (TA).
Unique Advantages
- Predictable timing performance: 167 MHz clock frequency, 700 ps access time, and 15 ns write cycle time provide clear timing parameters for system design.
- Compact BGA footprint: 60-TFBGA package (60-FBGA (10x12.5)) enables space-efficient board layouts.
- Standard parallel DDR interface: Parallel memory interface and 64M x 8 organization simplify integration into parallel DRAM designs.
- Controlled supply range: 2.3V–2.7V supply voltage range allows compatibility with systems designed to those rail specifications.
- Defined operating temperature: 0°C–70°C (TA) rating for applications within standard commercial temperature environments.
Why Choose IC DRAM 512MBIT PAR 60FBGA?
The MT46V64M8BN-6:D TR combines DDR SDRAM architecture with clearly specified electrical and timing characteristics—512 Mbit capacity, 64M x 8 organization, 167 MHz clocking, and a 60-TFBGA package—providing a compact, specification-driven memory option for designs that require parallel DRAM. The device is produced by Micron Technology Inc., ensuring component traceability to a known manufacturer.
This part is suitable for designers seeking a defined DDR memory component with documented clock, access, and voltage specifications for predictable integration into commercial-temperature applications.
Request a quote or submit a sourcing inquiry to obtain pricing and availability for the MT46V64M8BN-6:D TR.
