MT46V64M8BN-75:D TR

The MT46V64M8BN-75:D TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface. It is offered in a compact 60-TFBGA package and is designed for systems requiring synchronous DRAM with defined timing and supply characteristics.

Key electrical and timing parameters include a 133 MHz clock frequency, 750 ps access time, a 15 ns write cycle time (word/page), and a supply voltage range of 2.3 V to 2.7 V. The device is specified for operation from 0°C to 70°C (TA).

Key Features

• Memory Architecture 512 Mbit capacity organized as 64M × 8 for parallel DDR access.
• Memory Type Volatile DRAM using SDRAM - DDR technology with a parallel memory interface.
• Performance 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time (word/page) provide defined timing for system integration.
• Power Defined supply voltage range of 2.3 V to 2.7 V to support system power-rail planning.
• Package 60-TFBGA footprint (60-FBGA, 10 × 12.5 mm) supporting compact board layouts.
• Operating Conditions Specified for ambient operation from 0°C to 70°C (TA).
• Mounting & Format Surface-mount, volatile DRAM device in FBGA packaging.

Unique Advantages

• Deterministic timing: 133 MHz clock and 750 ps access time enable predictable memory latency.
• Compact footprint: 60-TFBGA (10 × 12.5 mm) package minimizes PCB area for space-constrained designs.
• Defined power envelope: 2.3 V–2.7 V supply range simplifies integration with common DDR power rails.
• Standard DDR architecture: Parallel SDRAM - DDR organization (64M × 8) aligns with conventional memory interfaces.
• Commercial temperature range: Specified 0°C to 70°C operation for typical commercial applications.

Why Choose MT46V64M8BN-75:D TR?

The MT46V64M8BN-75:D TR combines a 512 Mbit DDR SDRAM architecture with defined timing and power specifications to support embedded and system designs that require predictable memory behavior and a compact package. Its combination of 133 MHz clocking, 750 ps access time, and a 60-TFBGA footprint makes it suitable for designs where board space and timing determinism are important.

This device is appropriate for customers seeking a standardized, parallel DDR DRAM component with clear electrical and environmental limits. Its specified voltage range and operating temperature make it straightforward to integrate into commercial-grade systems.

Request a quote or submit a sales inquiry for MT46V64M8BN-75:D TR to obtain current pricing, availability, and ordering information.