MT46V64M8CV-5B:J
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 731 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8CV-5B:J – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V64M8CV-5B:J is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It provides standard DDR SDRAM architecture with a 200 MHz clock frequency and is delivered in a 60-pin FBGA package.
This device is intended for use in systems that require a 512 Mbit parallel DDR memory element, offering a compact package and established DDR timing characteristics for integration into memory subsystems operating at 2.5 V–2.7 V and 0 °C–70 °C ambient.
Key Features
- Core / Memory 512 Mbit DDR SDRAM organized as 64M × 8, supporting standard parallel DDR memory interface.
- Performance 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word/page) of 15 ns for predictable DDR timing behavior.
- Power Operates from a 2.5 V to 2.7 V supply range.
- Package Supplied in a 60-FBGA package (8 × 12.5), identified as 60-VFBGA in package case specifications for compact board-level integration.
- Operating Range Specified for ambient operation from 0 °C to 70 °C (TA).
- Memory Interface Parallel DDR interface suitable for standard DDR memory system designs.
Typical Applications
- Systems requiring parallel DDR memory — Provides a 512 Mbit DDR SDRAM option for designs that need parallel DDR storage and predictable timing.
- Compact board-level designs — 60-FBGA (8×12.5) package supports high density placement in space-constrained layouts.
- Standard-voltage memory subsystems — Operates within a 2.5 V–2.7 V supply range for compatibility with legacy DDR power domains.
Unique Advantages
- High-density DDR memory: 512 Mbit capacity in a 64M × 8 organization provides substantial storage in a single device.
- Predictable DDR timing: 200 MHz clock frequency, 700 ps access time, and 15 ns write cycle time deliver consistent timing parameters for system design.
- Compact FBGA package: 60-FBGA (8×12.5) package enables space-efficient integration on densely populated PCBs.
- <strong-Compatible voltage range: 2.5 V–2.7 V supply supports designs using standard DDR voltage domains.
- Defined operating temperature: Specified for 0 °C to 70 °C ambient operation for use in commercially rated environments.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V64M8CV-5B:J delivers a straightforward, high-density DDR SDRAM option with clear electrical and timing specifications, a compact 60-FBGA footprint, and defined commercial temperature and supply ranges. It is positioned for designs that require a 512 Mbit parallel DDR memory component with predictable performance characteristics.
Engineers and procurement teams looking for a Micron Technology Inc. DDR memory device with 64M × 8 organization, 200 MHz clocking, and a compact FBGA package will find this part suitable for integration into established DDR memory subsystems where the provided specifications align with system requirements.
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