MT46V64M8CV-5B IT:J TR

The MT46V64M8CV-5B IT:J TR is a 512 Mbit DDR SDRAM (16M × 8 × 4 banks) in a 60-ball FBGA package, manufactured by Micron Technology Inc. It implements an internal pipelined double-data-rate architecture with source-synchronous data capture and differential clock inputs for high-throughput parallel memory operation.

This device targets designs that require a compact 60-ball FBGA memory solution operating from 2.5 V I/O and supporting up to a 200 MHz clock rate (DDR data rate), with industrial temperature range capability.

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data accesses per clock cycle; DLL aligns DQ and DQS transitions with CK for timing integrity.
• Memory Organization  64M × 8 configuration yielding 512 Mbit density with four internal banks to support concurrent operations and programmable burst lengths (2, 4, or 8).
• Interface & Timing  Parallel DDR interface with bidirectional data strobe (DQS), differential clock inputs (CK/CK#), and command timing on positive CK edges; specified clock frequency up to 200 MHz and access time of 700 ps.
• Power & I/O  VDD/VDDQ nominal operation at 2.5 V (specified 2.5 V ±0.2 V and option for 2.6 V ±0.1 V for DDR400); 2.5 V I/O compatible with SSTL_2 signaling.
• Package  60-ball FBGA (60-TFBGA / 60-FBGA, footprint 8 × 12.5 mm option) for compact board-level integration.
• Temperature Range  Industrial operating temperature range: −40°C to +85°C (TA).
• Reliability & Maintenance  Auto refresh and optional self refresh support; 8192 refresh cycles per 64 ms (commercial/industrial option).
• Write & Cycle Timing  Write cycle time (word page) specified at 15 ns, supporting page-based write timing requirements.

Typical Applications

• Embedded memory for parallel-interface systems  Provides 512 Mbit DDR SDRAM in a compact FBGA footprint for embedded designs requiring DDR performance and source-synchronous DQS signaling.
• Industrial-temperature electronics  Suited for systems that must operate between −40°C and +85°C while maintaining DDR timing and refresh behavior.
• Board-level memory modules  Ideal for PCB designs that need a 60-ball FBGA memory device with 2.5 V I/O and standard DDR command/timing interfaces.

Unique Advantages

• Double-data-rate throughput: Internal DDR architecture and DQS-based source-synchronous capture enable two data transfers per clock edge for increased bandwidth versus single-data-rate devices.
• Compact FBGA package: 60-ball FBGA (8 × 12.5 mm option) minimizes PCB area while providing a full parallel DDR interface for board-level integration.
• Industrial temperature support: Specified operation from −40°C to +85°C supports deployment in temperature-challenging environments without derating device specifications.
• SSTL_2 compatible I/O: 2.5 V I/O levels align with SSTL_2 signaling standards (VDD/VDDQ nominal 2.5 V), simplifying interface design with compatible controllers.
• Flexible burst and bank operation: Four internal banks and programmable burst lengths (2/4/8) enable efficient burst transfers and concurrent bank activity for optimized throughput.
• Timing control features: Differential clock inputs, DLL alignment, and DQS timing options help maintain predictable data timing and capture windows.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8CV-5B IT:J TR is positioned for designs requiring a 512 Mbit DDR SDRAM with industrial temperature capability, compact 60-ball FBGA packaging, and standard 2.5 V I/O. Its DDR architecture, onboard DLL, and source-synchronous DQS support predictable timing and reliable data transfer in parallel-interface systems.

This device is appropriate for engineers specifying board-level DDR memory where compact footprint, industrial temperature range, and established DDR timing features are required. Selecting this Micron-manufactured device provides a clear specification set for integration, timing closure, and thermal margin planning.

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