MT46V64M8CV-5B:J TR

The MT46V64M8CV-5B:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8, implemented in a 60-ball FBGA package. It provides a parallel DDR memory interface with a 200 MHz clock frequency and timing characteristics suitable for board-level external memory in systems requiring volatile DRAM storage.

Key electrical and mechanical attributes include a 2.5 V–2.7 V supply range, access time of 700 ps, a write cycle time (word/page) of 15 ns, and an operating ambient temperature range of 0°C–70°C (TA).

Key Features

• Memory Core  512 Mbit total capacity organized as 64M × 8 for byte-wide data paths and predictable addressing.
• DDR SDRAM Technology  SDRAM - DDR architecture with a 200 MHz clock frequency and an access time of 700 ps for timing-sensitive designs.
• Interface  Parallel memory interface suitable for systems that employ parallel DDR memory architectures.
• Power  Operates from a 2.5 V to 2.7 V supply, enabling compatibility with systems using that DDR supply window.
• Timing  Write cycle time (word/page) specified at 15 ns to support system memory timing requirements.
• Package  60-ball FBGA package (60-VFBGA / 60-FBGA, 8 × 12.5 mm) for compact board-level mounting.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA), matching commercial temperature applications.

Typical Applications

• Parallel DDR memory subsystems  Board-level external DRAM for systems that require a parallel DDR interface and 512 Mbit capacity.
• Compact memory modules  Small FBGA footprint enables integration in space-constrained PCBs where board-level DRAM is needed.
• System memory expansion  Adds volatile DDR storage to designs that operate within a 2.5 V–2.7 V supply domain and 0°C–70°C ambient range.

Unique Advantages

• 512 Mbit density in a single device: Provides moderate capacity without multi-device memory arrays, simplifying BOM and layout.
• Defined DDR timing: 200 MHz clock frequency and 700 ps access time enable consistent timing analysis and integration.
• Compatible supply range: 2.5 V–2.7 V operation aligns with typical DDR supply rails used on many parallel-memory platforms.
• Compact FBGA package: 60-FBGA (8 × 12.5 mm) package supports dense PCB designs and surface-mount assembly.
• Specified write timing: 15 ns write cycle time (word/page) provides a clear parameter for system-level memory performance planning.
• Commercial temperature rating: 0°C–70°C (TA) operating range suited to standard commercial applications.

Why Choose MT46V64M8CV-5B:J TR?

The MT46V64M8CV-5B:J TR offers a straightforward DDR SDRAM building block for designs that require 512 Mbit of volatile memory in a compact 60-FBGA package. With a 64M × 8 organization, defined DDR timing (200 MHz clock, 700 ps access), and a 2.5 V–2.7 V supply range, it is positioned for systems that need predictable parallel DDR memory behavior and a small board footprint.

This device is appropriate for engineers and procurement teams specifying board-level DDR memory for commercial-temperature applications where capacity, clear timing parameters, and package density are primary selection criteria.

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