MT46V64M8CY-5B IT:J TR

The MT46V64M8CY-5B IT:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and four internal banks to support two data transfers per clock cycle.

Designed for systems requiring medium-density, high-throughput volatile memory, this device offers 200 MHz clock operation, a 2.5 V I/O supply range, and an industrial operating temperature range of −40 °C to +85 °C.

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization  512 Mbit capacity organized as 64M × 8 with a parallel DRAM interface; supports programmable burst lengths of 2, 4, or 8.
• Performance & Timing  Clock frequency 200 MHz (speed grade -5B) with access time ~700 ps and write cycle time (word page) of 15 ns; CL timing options and data-out windows defined in the datasheet.
• Data Capture & Signal Integrity  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DLL aligns DQ and DQS transitions with CK.
• Power & I/O  VDD / VDDQ supply range of 2.5 V ±0.2 V (supported 2.5 V to 2.7 V in specifications); 2.5 V I/O signaling.
• Refresh & Power Management  Auto refresh and self-refresh options supported (self refresh availability varies by option); 8K refresh cycles specified in addressing table.
• Package  60-ball TFBGA / 60-FBGA package (supplier device package: 60-FBGA) with compact ball-grid footprint for board-level integration.
• Operating Temperature  Industrial temperature range: −40 °C to +85 °C (TA) as specified for the IT marking.

Unique Advantages

• Medium-density DDR in a compact package: 512 Mbit capacity in a 60-ball FBGA footprint reduces board area while providing parallel DDR connectivity.
• Two-transfers-per-clock DDR operation: Internal DDR architecture and DLL support enable doubled data throughput relative to single-data-rate designs at a given clock frequency.
• Source-synchronous DQS support: Bidirectional DQS with edge alignment for reads and center alignment for writes improves reliable data capture at high speeds.
• Flexible timing and burst operation: Programmable burst lengths (2, 4, 8) and defined CAS latency options allow designers to match memory timing to system requirements.
• Industrial temperature capability: Specified operation from −40 °C to +85 °C (IT marking) for deployment in temperature-challenging environments.
• Standard 2.5 V I/O: VDD/VDDQ at 2.5 V ±0.2 V (with 2.5 V–2.7 V supply range noted) provides compatibility with 2.5 V SSTL_2-style signaling environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8CY-5B IT:J TR delivers a balanced combination of density, timing flexibility, and industrial temperature operation for systems that require parallel DDR SDRAM in a small FBGA footprint. Its 64M × 8 organization, four internal banks and source-synchronous DQS provide the deterministic timing behavior engineers expect from DDR devices.

This device is suited to designs that need a reliable, medium-capacity volatile memory with defined 200 MHz operation, 2.5 V I/O, and industrial temperature range—offering a clear, verifiable specification set for integration into board-level memory subsystems.

Request a quote or submit a pricing and availability inquiry to receive lead-time and quantity information for the MT46V64M8CY-5B IT:J TR.