MT46V64M8CY-5B L:J TR

The MT46V64M8CY-5B L:J TR is a 512 Mbit double-data-rate (DDR) SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined DDR architecture with source-synchronous data capture to deliver two data accesses per clock cycle.

This device targets system designs that require compact, low-voltage DDR memory with defined timing performance—supporting up to 200 MHz clock operation (speed grade -5B), a 2.5 V–2.7 V supply range, and an operating temperature range of 0 °C to +70 °C.

Key Features

• Core architecture  Internal, pipelined DDR architecture providing two data accesses per clock cycle; includes DLL to align DQ/DQS with CK and differential clock inputs (CK/CK#).
• Memory organization  512 Mbit capacity organized as 64M × 8 with four internal banks for concurrent operation.
• Performance & timing  Speed grade -5B supporting up to 200 MHz (CL = 3) operation; access time 700 ps and write cycle time (word page) of 15 ns. Programmable burst lengths of 2, 4, or 8.
• Interface & I/O  Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data and data mask (DM) support; 2.5 V I/O (SSTL_2 compatible).
• Power  Voltage supply range 2.5 V to 2.7 V; VDD/VDDQ options documented for standard DDR operating points.
• Package & thermal  60-ball FBGA (8 × 12.5 mm) package (60-TFBGA); operating temperature range 0 °C to +70 °C (TA).
• Refresh & retention  Supports auto refresh and self refresh to maintain data integrity over refresh cycles (self refresh availability noted in device options).

Unique Advantages

• Deterministic DDR throughput: Two data transfers per clock cycle and a -5B timing grade enabling operation up to 200 MHz provide predictable DDR performance for timing-sensitive designs.
• Compact package footprint: 60-ball FBGA (8 × 12.5 mm) minimizes board area while retaining a parallel DDR interface.
• Flexible data handling: Programmable burst lengths and data mask (DM) support provide implementation flexibility for varied access patterns.
• Standard low-voltage I/O: 2.5 V supply and SSTL_2-compatible I/O simplify interfacing with standard DDR-compatible system logic.
• Built-in timing alignment: DLL and source-synchronous DQS support reduce timing uncertainty between CK, DQ, and DQS signals.
• Refresh management: Auto refresh and self refresh capabilities support sustained data retention and simplified refresh control.

Why Choose MT46V64M8CY-5B L:J TR?

The MT46V64M8CY-5B L:J TR provides a compact 512 Mbit DDR SDRAM solution with well-defined timing (speed grade -5B) and source-synchronous signaling designed for systems that require predictable parallel DDR performance at up to 200 MHz. Its 2.5 V–2.7 V supply, SSTL_2-compatible I/O, and 60-ball FBGA package offer straightforward integration into designs where board area and standard DDR interfacing matter.

This device is suited to engineers seeking a verified DDR memory building block with programmable burst modes, internal DLL alignment, and supported refresh modes to simplify memory subsystem design and timing validation.

Request a quote or submit an inquiry for MT46V64M8CY-5B L:J TR to receive pricing and availability information for your project requirements.