MT46V64M8CY-5B AIT:J TR

The MT46V64M8CY-5B AIT:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements a pipelined double-data-rate (DDR) architecture with source-synchronous data capture and internal DLL for aligned data timing.

Designed for automotive-class applications, this device combines a 2.5 V supply range, AEC-Q100 qualification, and an extended operating range to support embedded and vehicle-grade systems that require compact DDR memory at up to 200 MHz clock operation.

Key Features

• Core / Architecture  Internal pipelined DDR architecture provides two data accesses per clock cycle and supports source-synchronous data capture using DQS.
• Memory Organization & Density  512 Mbit density organized as 64M × 8 with four internal banks for concurrent operation.
• Performance & Timing  Supports up to 200 MHz clock frequency (speed grade -5B) with an access time of 700 ps and programmable burst lengths of 2, 4, or 8.
• Data Integrity & Interface  Bidirectional data strobe (DQS), differential clock inputs (CK/CK#), and DLL alignment improve read/write timing and data capture accuracy.
• Power  VDD/VDDQ supply range 2.5 V to 2.7 V with 2.5 V I/O signaling (SSTL_2 compatible as specified in the datasheet).
• Package  60-ball FBGA package (60‑FBGA, 8 × 12.5 mm footprint variant) for compact board-level integration.
• Reliability & Qualification  AEC-Q100 qualification and an operating temperature range of -40 °C to +85 °C (TA) for automotive and industrial use cases.
• Additional Functional Features  Auto refresh, programmable timing options, data mask (DM) support for masked writes, and concurrent auto precharge options as described in the datasheet.

Typical Applications

• Automotive embedded systems  Automotive-grade DDR memory for vehicle ECUs and modules that require AEC-Q100 qualified components and extended temperature operation.
• On-board buffering and frame storage  512 Mbit density and parallel DDR interface suited to buffering, temporary frame storage, and intermediate data buffers in embedded designs.
• Industrial control  Systems operating in -40 °C to +85 °C environments that need reliable, compact DDR memory with standard 2.5 V I/O signaling.
• Compact module integration  Use in space-constrained boards where the 60-ball FBGA footprint provides a small, mountable DDR memory option.

Unique Advantages

• AEC-Q100 Qualification: Explicit AEC-Q100 qualification supports selection for automotive and other high-reliability applications.
• Automotive Temperature Range: Rated for -40 °C to +85 °C (TA), enabling deployment in temperature-challenging environments.
• DDR Performance at 200 MHz: Speed grade -5B supports up to 200 MHz operation with CL timing defined in the datasheet for predictable latency and throughput.
• Source-Synchronous Data Capture: Bidirectional DQS and internal DLL improve timing alignment between DQ and clock for reliable read/write transfers.
• Compact FBGA Packaging: 60-ball FBGA (8 × 12.5 mm) provides a low-profile, board-level solution for space-limited designs.
• Micron Specification Set: Feature set and timing parameters are provided by Micron Technology Inc., enabling designs based on documented device behavior.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8CY-5B AIT:J TR is positioned for designs that require a compact, automotive-qualified DDR memory with documented timing, 2.5 V I/O, and source-synchronous data capture. Its 512 Mbit density, 64M × 8 organization, and -5B speed grade deliver deterministic timing up to 200 MHz for embedded buffering and system memory tasks.

Engineers specifying this device gain a Micron-specified DDR SDRAM option with AEC-Q100 qualification and a -40 °C to +85 °C operating range, suited to automotive and industrial electronics projects that demand qualified components and compact packaging.

If you need pricing, availability, or custom packaging information, request a quote or contact sales to discuss lead times and ordering options.