MT46V64M8CY-5B IT:J

The MT46V64M8CY-5B IT:J from Micron Technology is a 512Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with bidirectional data strobe for source-synchronous data capture, delivering two data accesses per clock cycle.

Designed for systems requiring high-density, low-voltage DDR memory in a compact FBGA package, this device targets industrial-temperature applications that demand reliable operation across a wide ambient range and standard DDR timing options.

Key Features

• Memory Architecture  512 Mbit organized as 64M × 8 with four internal banks for concurrent operation.
• DDR SDRAM Core  Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; supports programmable burst lengths of 2, 4, or 8.
• Clocking and Data Strobe  Differential clock inputs (CK, CK#) and bidirectional DQS transmitted/received with data for source-synchronous capture; DLL aligns DQ/DQS transitions with CK.
• Performance / Timing  Specified clock frequency up to 200 MHz with an access-time window equivalent to ±0.70 ns (700 ps) for the -5B speed grade.
• Voltage and I/O  2.5 V nominal supply (VDD/VDDQ), compatible with SSTL_2 signaling; device voltage supply range specified at 2.5 V to 2.7 V.
• Refresh and Power Management  Auto refresh supported with an 8K refresh cycle count; self-refresh options available (note: self refresh availability depends on device revision).
• Package and Mounting  60-ball thin FBGA package (60-TFBGA / 60-FBGA, 10.0 mm × 12.5 mm footprint) optimized for compact board-level integration.
• Operating Temperature  Industrial ambient rating of -40 °C to +85 °C (TA).

Typical Applications

• PC memory modules (PC2100 / PC2700 / PC3200 compatibility)  Speed-grade compatibility enables use in standard DDR module designs that target these PC memory classes.
• Industrial embedded systems  512 Mbit density in a compact FBGA package with −40 °C to +85 °C rating for industrial ambient operation.
• Compact DDR memory subsystems  High-density, low-voltage DDR in a 60-ball FBGA footprint for space-constrained board designs.

Unique Advantages

• High-density DDR in compact package: 512 Mbit organized as 64M × 8 packaged in a 60-ball FBGA (10 × 12.5 mm) for space-efficient memory implementations.
• Double-data-rate throughput: Internal DDR architecture with two data accesses per clock cycle increases effective bandwidth versus single-data-rate devices.
• Source-synchronous data capture: Bidirectional DQS and DLL alignment simplify timing margins for read/write data capture.
• SSTL_2-compatible I/O at 2.5 V: Standard 2.5 V I/O and defined VDD/VDDQ ranges (2.5 V ±0.2 V) support established DDR signaling environments.
• Industrial temperature range: Specified operation from −40 °C to +85 °C supports deployment in industrial ambient environments.
• Standard refresh support: Auto refresh with 8K refresh cycles for continuous data retention management.

Why Choose MT46V64M8CY-5B IT:J?

The MT46V64M8CY-5B IT:J delivers a clear balance of density, DDR performance and industrial-temperature operation in a compact 60-ball FBGA package. Its DDR core, source-synchronous DQS, and programmable burst lengths make it suitable for designs that require standard DDR timing and interface behavior at 2.5 V I/O levels.

This device is well suited for engineers specifying a 512Mbit DDR SDRAM where board space, industrial ambient tolerance, and established DDR signaling compatibility are key selection criteria. Its documented timing and refresh behavior support predictable integration into memory subsystems designed around PC2100/PC2700/PC3200 speed classes.

Request a quote or submit an inquiry to sales for pricing, availability and lead-time information on the MT46V64M8CY-5B IT:J.