MT46V64M8CY-5B AIT:J

The MT46V64M8CY-5B AIT:J is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements a Double Data Rate architecture with source-synchronous DQS signalling and an internal DLL to support two data transfers per clock cycle.

Designed and qualified for automotive use, this device targets embedded automotive memory subsystems that require AEC‑Q100 qualification, a compact 60‑ball FBGA package, and operation across extended temperature ranges.

Key Features

• Core / Memory  512 Mbit DRAM arranged as 64M × 8 with four internal banks for concurrent operation.
• DDR Architecture  Internal pipelined double‑data‑rate operation with bidirectional data strobe (DQS) for source‑synchronous data capture.
• Performance & Timing  Specified for a 200 MHz clock frequency with an access time of 700 ps and write cycle time (word/page) of 15 ns; speed grade -5B timing available.
• Interfaces  Differential clock inputs (CK/CK#), data mask (DM), programmable burst lengths (2, 4, 8), and DQS aligned operation for READs and WRITEs.
• Power  Operates from a 2.5 V to 2.7 V supply (VDD / VDDQ in the 2.5 V range as specified).
• Refresh & Power Management  Supports auto refresh with automotive refresh timing (16 ms, 8192 cycles specified for automotive devices).
• Qualification & Reliability  AEC‑Q100 qualification and Automotive grade designation for applications requiring component-level automotive qualification.
• Package & Temperature  60‑TFBGA / 60‑ball FBGA (8 × 12.5 mm) package; operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Automotive electronic systems  Qualified DDR memory for automotive control modules and embedded subsystems requiring AEC‑Q100 parts.
• Automotive infotainment  High‑speed DDR buffering for multimedia and display subsystems in automotive environments.
• Embedded automotive memory  Onboard DRAM for data buffering and temporary storage in automotive electronic control units.

Unique Advantages

• AEC‑Q100 qualification: Provides a qualified component suitable for automotive design-in and validation processes.
• DDR performance at 200 MHz: Enables two data transfers per clock cycle with a 700 ps access time for responsive memory operations.
• Automotive temperature range: Rated for −40 °C to +85 °C (TA) to support extended‑temperature automotive environments.
• Compact FBGA package: 60‑ball FBGA (8 × 12.5 mm) simplifies PCB routing while keeping board footprint small.
• SSTL_2‑compatible I/O voltage: Operates in the 2.5 V range to match common DDR I/O requirements.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8CY-5B AIT:J delivers a compact, AEC‑Q100 qualified DDR SDRAM solution for automotive and embedded designs that need dependable, high‑speed parallel memory. Its 512 Mbit capacity, 64M × 8 organization, and 200 MHz DDR timing balance density and performance for buffering and temporary storage tasks.

This part is suited to designers specifying automotive‑grade DRAM in a 60‑ball FBGA footprint where controlled supply voltage (2.5 V range), defined timing parameters, and extended temperature operation are required. The device’s documented timing, refresh behavior, and electrical characteristics support predictable integration into automotive memory subsystems.

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