MT46V64M8CV-5B IT:J

The MT46V64M8CV-5B IT:J is a 512 Mbit DDR SDRAM device supplied in a 60-ball thin FBGA package. It implements a double-data-rate architecture with a parallel memory interface and is organized for byte-wide operation.

This device targets systems requiring low-voltage DDR SDRAM with industrial temperature capability (−40°C to +85°C) and timing targeted at the -5B speed grade (200 MHz clock rate, CL = 3). Key value comes from standard DDR features such as source-synchronous DQS, internal DLL, and programmable burst lengths for predictable memory timing and interface integration.

Key Features

• Core / Architecture Internal pipelined DDR architecture provides two data accesses per clock cycle and a DLL to align data (DQ) and strobe (DQS) transitions with the clock (CK/CK#).
• Memory Organization 512 Mbit capacity organized as 64M × 8; documented as 16 Meg × 8 × 4 banks for internal bank structure.
• Interface & Data Capture Parallel DDR interface with bidirectional data strobe (DQS) for source-synchronous capture; DQS is edge-aligned for reads and center-aligned for writes. Differential clock inputs (CK/CK#) and commands issued on positive CK edges.
• Timing & Performance -5B speed grade supports up to a 200 MHz clock rate (CL = 3) with a data-out window of 1.6 ns and an access time of 700 ps; programmable burst lengths of 2, 4, or 8.
• Power Standard 2.5 V I/O (SSTL_2 compatible); supply range documented as 2.5 V ±0.2 V and an option for 2.6 V ±0.1 V at DDR400 timing; product-level voltage supply listed as 2.5 V–2.7 V.
• Refresh & Reliability Supports auto refresh (8192 cycles), self refresh (optionally), and concurrent auto precharge. tRAS lockout and standard refresh counts are documented for commercial and industrial modes.
• Package & Temperature 60-TFBGA (60-ball FBGA, 10 mm × 12.5 mm footprint) mounting; industrial temperature rating of −40°C to +85°C is specified for this part marking (IT).

Unique Advantages

• Industrial temperature support: Specified for −40°C to +85°C operation, enabling use where extended temperature range is required.
• DDR source-synchronous capture: DQS transmitted/received with data and an internal DLL provide aligned data capture for reliable read/write operations.
• Flexible timing options: Programmable burst lengths (2/4/8) and defined speed-grade timing (‑5B) let designers match system timing and throughput needs.
• Compact FBGA package: 60-ball FBGA (10 mm × 12.5 mm) enables high-density board integration in space-constrained designs.
• Standard low-voltage operation: 2.5 V I/O (SSTL_2 compatible) and defined supply ranges simplify power-domain planning for DDR interfaces.

Why Choose MT46V64M8CV-5B IT:J?

The MT46V64M8CV-5B IT:J provides a specification-driven DDR SDRAM option for designs that need a 512 Mbit parallel DDR device in a compact FBGA package with industrial temperature capability. Its standard DDR features—DQS, DLL, programmable burst lengths, and defined speed-grade timing—support predictable timing integration and system-level refresh management.

This part is suited for engineers specifying low-voltage DDR memory where footprint, industrial temperature range, and documented timing characteristics (‑5B / 200 MHz, CL = 3) are primary selection criteria. The device’s documented electrical and timing parameters support clear design trade-offs and system integration planning.

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