MT46V64M8BN-6:F

The MT46V64M8BN-6:F is a 512 Mbit volatile DDR SDRAM organized as 64M × 8 with a parallel memory interface. It implements internal pipelined double-data-rate architecture with source-synchronous DQS and differential clock inputs to support high-throughput data transfer.

Targeted for board-level memory integration, the device combines a compact 60-ball TFBGA package with commercial operating range and low-voltage operation to address space-constrained designs requiring DDR performance at a 167 MHz clock rate (speed grade -6).

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data transfers per clock cycle and a DLL to align DQ/DQS transitions with CK.
• Memory Organization & Capacity  512 Mbit total capacity, organized as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks as specified).
• Performance & Timing  Clock frequency up to 167 MHz (speed grade -6) with an access time of 700 ps and write cycle time (word page) of 15 ns.
• Data Interface  Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data; DQS is edge-aligned for READs and center-aligned for WRITEs.
• Programmable Operation  Programmable burst lengths of 2, 4 or 8 and support for auto precharge and concurrent auto precharge operation.
• Power  Supply range specified at 2.3 V to 2.7 V for device operation.
• Package  60-ball TFBGA / FBGA (10 mm × 12.5 mm) compact package for high-density board mounting.
• Temperature Range  Commercial operating temperature: 0 °C to +70 °C (TA) as specified.
• Additional DDR Features  Differential clock inputs (CK/CK#), data mask (DM), and support for multiple timing grades listed in the datasheet.

Typical Applications

• Module and system memory  Use as a 512 Mbit DDR SDRAM device in parallel memory interfaces where a 64M × 8 organization and four-bank operation are required.
• PC speed-grade memory  Speed-grade compatibility information in the datasheet includes PC3200, PC2700 and PC2100 listings for applicable timing grades.
• Compact board-level memory  60-ball FBGA (10 × 12.5 mm) package supports high-density board layouts and compact module designs.

Unique Advantages

• DDR source-synchronous capture: Bidirectional DQS with DLL alignment enables reliable data capture for both reads and writes, supporting consistent timing behavior.
• High effective bandwidth per clock: Double-data-rate architecture provides two data transfers per clock cycle, increasing throughput without raising core clock frequency.
• Compact, board-friendly package: 60-ball FBGA (10 × 12.5 mm) minimizes PCB footprint for space-constrained designs.
• Flexible timing options: Datasheet specifies multiple speed/timing grades and programmable burst lengths (2/4/8) to match system latency and throughput requirements.
• Standard commercial temperature rating: Specified for 0 °C to +70 °C operation for use in commercial applications.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports lower-power system designs compared to legacy higher-voltage memories.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8BN-6:F positions itself as a compact, 512 Mbit DDR SDRAM element suitable for designs that require DDR transfer efficiency, a parallel interface and a small-footprint FBGA package. Its combination of four internal banks, programmable burst lengths and source-synchronous DQS supports predictable timing and throughput in board-level memory subsystems.

This device is appropriate for commercial-temperature applications that need a 64M × 8 memory organization, a 167 MHz clock speed grade, and a low-voltage supply range. Its documented timing grades and package dimensions make it a practical choice for engineers integrating DDR SDRAM where space and timing control are key considerations.

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