MT46V64M8BN-6:F TR

The MT46V64M8BN-6:F TR is a 512 Mbit DDR SDRAM device configured as 64M × 8 with a parallel memory interface. It implements a double-data-rate architecture with source-synchronous data capture and a differential clock input for synchronous board-level DDR memory applications.

Key electrical and mechanical characteristics include a 167 MHz clock rate (speed grade -6), a 2.3 V–2.7 V supply range, 700 ps access time, and a 60‑ball FBGA (10 mm × 12.5 mm) package. The device is specified for commercial operation from 0 °C to 70 °C.

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data accesses per clock cycle with a DLL to align DQ and DQS transitions to CK.
• Memory Organization  512 Mbit capacity organized as 64M × 8 with four internal banks for concurrent operation.
• Performance / Timing  Speed grade -6 supports a 167 MHz clock rate (CL = 2.5), 700 ps access time, and a word-page write cycle time of 15 ns. Programmable burst lengths of 2, 4, or 8 are supported.
• Data I/O and Timing Support  Bidirectional data strobe (DQS) is transmitted/received with data for source‑synchronous capture; DQS edge‑aligned for READs and center‑aligned for WRITEs. Data mask (DM) supported for write masking.
• Interface / I/O  Parallel DDR interface with differential clock inputs (CK/CK#) and 2.5 V I/O (SSTL_2 compatible as documented in the device features).
• Refresh and Self-Refresh  Auto refresh with an 8K refresh count; self refresh option documented in device features.
• Power  Nominal supply range 2.3 V to 2.7 V (device VDD/VDDQ variants documented in the datasheet).
• Package  60‑ball FBGA package, 10 mm × 12.5 mm footprint (60‑FBGA, BN marking for Pb‑free option).
• Operating Temperature  Commercial temperature grade specified for 0 °C to +70 °C (TA).

Typical Applications

• Board-level parallel DDR memory  Provides 512 Mbit density in a 64M × 8 organization for designs requiring parallel DDR SDRAM in a compact FBGA footprint.
• High-density on-board storage  Use where a 512 Mbit DDR device with programmable burst lengths and source-synchronous DQS is required for synchronous data transfers.
• Synchronous memory subsystems  Suitable for systems implementing DDR interfaces with differential clocks and SSTL_2-compatible I/O signaling.

Unique Advantages

• Double-data-rate throughput: Internal DDR architecture and source-synchronous DQS allow two data transfers per clock cycle for higher effective bandwidth.
• Compact FBGA packaging: 60‑ball FBGA (10 mm × 12.5 mm) minimizes board area while delivering 512 Mbit density.
• Speed-grade flexibility: The -6 speed grade supports 167 MHz operation (CL = 2.5) for systems targeting DDR333 timing.
• Precision timing control: DLL alignment, programmable burst lengths, and DQS timing options enable tighter control of data capture windows.
• Standard DDR signaling: 2.5 V I/O (SSTL_2 compatible) and differential clock inputs support common DDR interface requirements.
• Commercial-temperature rating: Specified for 0 °C to +70 °C operation for standard commercial applications.

Why Choose MT46V64M8BN-6:F TR?

The MT46V64M8BN-6:F TR is a Micron Technology DDR SDRAM device that delivers 512 Mbit density in a compact 60‑ball FBGA package with established DDR features such as DLL, DQS, programmable burst lengths, and SSTL_2-compatible I/O. Its -6 speed grade and documented timing parameters support 167 MHz operation with defined access windows and DQS–DQ skew characteristics.

This device is suited to designs requiring a commercial-temperature, parallel DDR memory solution with clear electrical and timing specifications for board-level integration and synchronous data capture.

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