MT46V64M8BN-75 L:D

The MT46V64M8BN-75 L:D is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It provides a 64M × 8 memory organization and is specified for operation with a 133 MHz clock frequency and parallel access timing suited to systems requiring synchronized DDR memory.

This device targets designs that require mid-density parallel DDR DRAM in a compact 60‑FBGA package, offering defined timing, voltage and temperature ranges for straightforward integration.

Key Features

• Memory Core Volatile DRAM implemented as DDR SDRAM with a memory organization of 64M × 8 and a total capacity of 512 Mbit.
• Performance Clock frequency rated at 133 MHz with an access time of 750 ps and a write cycle (word page) time of 15 ns.
• Interface Parallel memory interface designed for parallel DDR connectivity.
• Power Operating supply voltage range from 2.3 V to 2.7 V.
• Package 60‑TFBGA package (listed as 60‑FBGA, 10 × 12.5 mm), suitable for surface-mount PCB assembly.
• Environmental & Operating Range Ambient operating temperature range specified as 0°C to 70°C (TA).
• Mounting Type Mounting type listed as Volatile.

Typical Applications

• Systems requiring parallel DDR memory — Provides 512 Mbit DDR SDRAM capacity with a parallel interface for designs that need synchronous parallel memory access.
• Board-level memory expansion — Use as an on-board DRAM device in applications that require a 64M × 8 organization and 133 MHz clocking.
• Space-constrained PCBs — The 60‑FBGA (10 × 12.5 mm) package fits compact layouts while delivering DDR SDRAM functionality.

Unique Advantages

• Clear DDR SDRAM specification: Delivered as SDRAM - DDR with explicit clock and timing specs (133 MHz clock, 750 ps access time), simplifying timing analysis.
• Mid-range density: 512 Mbit capacity (64M × 8) provides a defined option between low- and high-density DRAM devices for balanced memory needs.
• Defined power envelope: Narrow supply range (2.3 V–2.7 V) allows consistent power budgeting and design planning.
• Compact FBGA packaging: 60‑TFBGA / 60‑FBGA (10 × 12.5 mm) reduces board footprint while maintaining soldered surface-mount form factor.
• Specified operating range: Rated for 0°C to 70°C ambient operation, enabling deployment in standard temperature environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8BN-75 L:D positions itself as a compact, mid-density DDR SDRAM option with clear electrical and timing specifications that support parallel memory architectures. Its 512 Mbit capacity, 133 MHz clock rating, and 60‑FBGA packaging make it suitable for designs where a defined DDR parallel memory block is required without moving to higher-density components.

This device is well suited for engineers and procurement teams planning board-level memory implementations that need specific timing, voltage, package, and temperature parameters to ensure consistent integration and predictable behavior over the device’s rated operating range.

Request a quote or submit a purchasing inquiry to obtain pricing and availability details for the MT46V64M8BN-75 L:D.