MT46V64M8BN-6 L:F TR

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 531 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B2AHTS Code8542.32.0024

Overview of MT46V64M8BN-6 L:F TR – IC DRAM 512MBIT PAR 60FBGA

The MT46V64M8BN-6 L:F TR is a 512 Mbit Double Data Rate (DDR) SDRAM device manufactured by Micron Technology Inc., delivered in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements a 64M × 8 memory organization with a parallel memory interface and internal DDR architecture for two data transfers per clock cycle.

This device targets designs that require on-board 512 Mbit DDR memory with a commercial operating range (0°C to 70°C) and 2.3 V–2.7 V supply operation. Key attributes include 167 MHz clock operation (DDR timing), 700 ps access window specification, programmable burst lengths, and standard DDR control features such as differential clock inputs and DLL-aligned data capture.

Key Features

  • Core Architecture Internal pipelined Double-Data-Rate (DDR) SDRAM architecture supporting two data accesses per clock cycle and a DLL for aligning DQ/DQS transitions with clock edges.
  • Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks for concurrent operation.
  • Performance & Timing Timing grade -6: 6 ns cycle time (CL = 2.5) with a 167 MHz clock rate; 700 ps access-time window and a write cycle time (word page) of 15 ns.
  • Data Integrity & I/O Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture, data mask (DM) support, and differential clock inputs (CK/CK#).
  • Programmable Burst & Refresh Programmable burst lengths of 2, 4, or 8; supports auto refresh and self-refresh options (note: self-refresh availability depends on device option).
  • Power VDD/VDDQ operation within 2.3 V to 2.7 V as specified for this device.
  • Package & Mounting 60-ball TFBGA / FBGA package (10 mm × 12.5 mm) intended for board-level mounting with a compact footprint.
  • Operating Temperature Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

  • Parallel memory subsystems — Implement as a 512 Mbit DDR component on parallel memory buses requiring DDR transfers and standard DDR control signals.
  • Compact board-level DRAM — Use where a small-footprint FBGA (10 mm × 12.5 mm) DDR memory device is required for on-board memory expansion.
  • Systems requiring SSTL_2-compatible I/O — Suitable for designs that use 2.5 V I/O signaling as indicated by the device’s 2.5 V I/O compatibility.

Unique Advantages

  • DDR source-synchronous capture: Bidirectional DQS and DLL alignment simplify timing for high-speed reads and writes, improving data capture reliability.
  • Predictable timing performance: -6 timing grade with 167 MHz clock operation and a 700 ps access window supports consistent, documented timing margins.
  • Flexible burst operation: Programmable burst lengths (2, 4, 8) allow designers to match memory transfers to system access patterns and bus efficiency needs.
  • Compact FBGA footprint: 60-ball FBGA (10 mm × 12.5 mm) packaging reduces board area for memory implementations while maintaining standard DDR pinout.
  • Standard DDR features: Includes auto refresh and optional self-refresh along with four internal banks, supporting standard DRAM refresh and concurrency models.
  • Wide supply tolerance: Operation across 2.3 V to 2.7 V accommodates common 2.5 V DDR supply schemes.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8BN-6 L:F TR offers a documented DDR SDRAM solution with a 512 Mbit capacity in a 64M × 8 organization, combining DDR-specific I/O (DQS, differential clock), DLL alignment, and programmable burst modes to support systems that require predictable DDR timing at 167 MHz operation. Its commercial temperature rating and 60-ball FBGA package provide a compact, board-mountable memory option for designs operating within the specified environmental and supply ranges.

This device is suited to designs that need standardized DDR behavior—auto refresh, optional self-refresh, and four internal banks—while maintaining a small footprint and 2.3 V–2.7 V supply compatibility. The MT46V64M8BN-6 L:F TR is appropriate for projects specifying Micron’s 512 Mbit DDR SDRAM feature set and timing grade -6 performance.

Request a quote or contact sales to discuss availability, lead times and volume pricing for the MT46V64M8BN-6 L:F TR.

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