MT46V64M8BN-6 IT:F

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 1,299 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of MT46V64M8BN-6 IT:F – IC DRAM 512MBIT PAR 60FBGA

The MT46V64M8BN-6 IT:F is a 512 Mbit DDR SDRAM organized as 64M x 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture that provides two data accesses per clock cycle and is targeted at memory subsystems that require industry-temperature operation.

Key value propositions include DDR performance at a 167 MHz clock rate, an industrial operating temperature range (–40°C to +85°C), and a compact 60-ball FBGA footprint for space-constrained designs.

Key Features

  • Core / Memory: 512 Mbit DDR SDRAM organized as 64M × 8 with four internal banks for concurrent operation and programmable burst lengths of 2, 4, or 8.
  • DDR Architecture & Timing: Internal pipelined DDR architecture delivering two data transfers per clock cycle; rated for a 167 MHz clock frequency with specified access-time of 700 ps and a write cycle time (word page) of 15 ns.
  • Data Path and Clocking: Bidirectional data strobe (DQS) transmitted/received with data and a DLL to align DQ/DQS transitions with CK; differential clock inputs (CK and CK#) with commands entered on each positive CK edge.
  • Power and I/O: Supply voltage range of 2.3 V to 2.7 V; supports 2.5 V I/O signaling as described in the datasheet options.
  • Refresh and Precharge: Supports auto refresh (64 ms, 8192-cycle) and concurrent auto precharge options for simplified memory management.
  • Package & Temperature: 60-ball FBGA (10 mm × 12.5 mm) package and industrial ambient temperature rating from –40°C to +85°C (TA).

Typical Applications

  • Industrial Embedded Systems — Provides DDR memory capacity and industrial temperature support for controllers, instrumentation, and industrial control modules.
  • Compact Memory Subsystems — Small 60-ball FBGA package enables use in space-constrained boards requiring standard DDR parallel memory.
  • General Purpose DDR Memory — Suitable where 512 Mbit DDR storage with programmable burst lengths and concurrent bank operation is required.

Unique Advantages

  • DDR double-data-rate operation: Two data accesses per clock cycle improve effective bandwidth compared with single-data-rate devices at the same clock frequency.
  • Industrial temperature rating: Specified –40°C to +85°C (TA) for use in environments that require extended ambient temperature performance.
  • Compact FBGA footprint: 60-ball FBGA (10 mm × 12.5 mm) balances capacity with a small board area for tight-layout designs.
  • Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and internal bank architecture enable optimized access patterns for typical memory workloads.
  • Synchronous source‑aligned data capture: DQS with DLL alignment and differential clock inputs support reliable, source-synchronous read and write timing.

Why Choose MT46V64M8BN-6 IT:F?

The MT46V64M8BN-6 IT:F delivers a straightforward, industry-temperature DDR SDRAM option with a 512 Mbit capacity and a compact 60-ball FBGA package. Its DDR architecture, DQS/DLL clocking, and four-bank organization provide predictable timing and concurrency for embedded memory subsystems that need robust operation across –40°C to +85°C.

This device is appropriate for designs requiring parallel DDR memory in a small footprint, offering a defined voltage supply range and documented timing characteristics for engineering validation and system integration.

To request a quote or get pricing and availability for the MT46V64M8BN-6 IT:F, submit an inquiry and our team will respond with detailed purchasing information.

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