MT46V64M8BN-6 IT:F
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 1,299 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT46V64M8BN-6 IT:F – IC DRAM 512MBIT PAR 60FBGA
The MT46V64M8BN-6 IT:F is a 512 Mbit DDR SDRAM organized as 64M x 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture that provides two data accesses per clock cycle and is targeted at memory subsystems that require industry-temperature operation.
Key value propositions include DDR performance at a 167 MHz clock rate, an industrial operating temperature range (–40°C to +85°C), and a compact 60-ball FBGA footprint for space-constrained designs.
Key Features
- Core / Memory: 512 Mbit DDR SDRAM organized as 64M × 8 with four internal banks for concurrent operation and programmable burst lengths of 2, 4, or 8.
- DDR Architecture & Timing: Internal pipelined DDR architecture delivering two data transfers per clock cycle; rated for a 167 MHz clock frequency with specified access-time of 700 ps and a write cycle time (word page) of 15 ns.
- Data Path and Clocking: Bidirectional data strobe (DQS) transmitted/received with data and a DLL to align DQ/DQS transitions with CK; differential clock inputs (CK and CK#) with commands entered on each positive CK edge.
- Power and I/O: Supply voltage range of 2.3 V to 2.7 V; supports 2.5 V I/O signaling as described in the datasheet options.
- Refresh and Precharge: Supports auto refresh (64 ms, 8192-cycle) and concurrent auto precharge options for simplified memory management.
- Package & Temperature: 60-ball FBGA (10 mm × 12.5 mm) package and industrial ambient temperature rating from –40°C to +85°C (TA).
Typical Applications
- Industrial Embedded Systems — Provides DDR memory capacity and industrial temperature support for controllers, instrumentation, and industrial control modules.
- Compact Memory Subsystems — Small 60-ball FBGA package enables use in space-constrained boards requiring standard DDR parallel memory.
- General Purpose DDR Memory — Suitable where 512 Mbit DDR storage with programmable burst lengths and concurrent bank operation is required.
Unique Advantages
- DDR double-data-rate operation: Two data accesses per clock cycle improve effective bandwidth compared with single-data-rate devices at the same clock frequency.
- Industrial temperature rating: Specified –40°C to +85°C (TA) for use in environments that require extended ambient temperature performance.
- Compact FBGA footprint: 60-ball FBGA (10 mm × 12.5 mm) balances capacity with a small board area for tight-layout designs.
- Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and internal bank architecture enable optimized access patterns for typical memory workloads.
- Synchronous source‑aligned data capture: DQS with DLL alignment and differential clock inputs support reliable, source-synchronous read and write timing.
Why Choose MT46V64M8BN-6 IT:F?
The MT46V64M8BN-6 IT:F delivers a straightforward, industry-temperature DDR SDRAM option with a 512 Mbit capacity and a compact 60-ball FBGA package. Its DDR architecture, DQS/DLL clocking, and four-bank organization provide predictable timing and concurrency for embedded memory subsystems that need robust operation across –40°C to +85°C.
This device is appropriate for designs requiring parallel DDR memory in a small footprint, offering a defined voltage supply range and documented timing characteristics for engineering validation and system integration.
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