MT46V64M8BN-5B:D

The MT46V64M8BN-5B:D is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface and a 64M × 8 organization. It is supplied in a 60‑FBGA package and is specified for operation from 0°C to 70°C with a 2.5 V to 2.7 V supply range.

This device targets designs that require a compact, parallel DDR memory element with defined timing characteristics—supporting clock operation at 200 MHz, a 700 ps access time, and a 15 ns write cycle time (word page).

Key Features

• Core / Memory 512 Mbit DRAM organized as 64M × 8; volatile memory for system working storage.
• Technology DDR SDRAM architecture with a parallel memory interface supporting standard DDR signaling.
• Performance Rated clock frequency of 200 MHz, access time of 700 ps, and write cycle time (word page) of 15 ns for deterministic timing behavior.
• Power Operates from a 2.5 V to 2.7 V supply range, enabling compatibility with systems using this voltage domain.
• Package 60‑TFBGA / 60‑FBGA (10 × 12.5 mm) supplier device package for board-level integration in space-constrained layouts.
• Environmental / Temperature Range Specified operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Embedded system memory — Provides 512 Mbit of volatile DDR storage for embedded controllers and processing modules requiring a parallel DDR interface.
• Board-level memory expansion — Used as a compact DRAM component to expand working memory on single‑board computers and add‑in modules.
• Commercial and industrial equipment — Suitable for equipment operating within the specified 0°C to 70°C ambient range and 2.5–2.7 V supply domain.

Unique Advantages

• Defined DDR performance — 200 MHz clock rating and 700 ps access time provide clear timing parameters for system design and validation.
• Moderate density, byte-wide organization — 64M × 8 organization simplifies interface implementation where an 8-bit data path is preferred.
• Compact BGA footprint — 60‑FBGA (10 × 12.5 mm) package reduces board area while allowing high pin density.
• Standard DDR parallel interface — Parallel signaling supports straightforward integration into designs requiring DDR DRAM modules.
• Supply and temperature compatibility — Operates from 2.5 V to 2.7 V and across 0°C–70°C, matching common commercial voltage and ambient specifications.

Why Choose MT46V64M8BN-5B:D?

The MT46V64M8BN-5B:D combines a 512 Mbit DDR SDRAM architecture with defined timing (200 MHz clock, 700 ps access time, 15 ns write cycle) and a compact 60‑FBGA package to meet design needs for predictable, parallel DRAM performance. Its 64M × 8 organization and 2.5–2.7 V supply range make it suitable for systems that require an 8‑bit DDR memory element within commercial temperature limits.

This device is appropriate for designers and procurement teams specifying board-level DDR memory where clear electrical and timing specifications, compact packaging, and a 0°C–70°C operating range are required for reliable system integration.

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