MT46V32M8TG-75:G TR

The MT46V32M8TG-75:G TR is a 256 Mbit DDR SDRAM device (32M × 8) manufactured by Micron Technology Inc. It implements a double-data-rate architecture with internal pipelined operation and is supplied in a 66‑pin TSSOP (0.400", 10.16 mm width) package.

This device targets systems that require parallel DDR memory with a 133 MHz clock capability and standard commercial temperature operation, providing configurable burst lengths, on‑chip DLL timing alignment, and standard auto‑refresh support for reliable volatile storage.

Key Features

• Core / Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture; supports two data accesses per clock cycle and includes on‑die DLL for DQ/DQS alignment.
• Memory Organization & Capacity 32M × 8 organization delivering 256 Mbit total capacity with four internal banks for concurrent operation.
• Performance & Timing Rated for a 133 MHz clock frequency with an access time of 750 ps and a word/page write cycle time of 15 ns; supports programmable burst lengths (2, 4, or 8).
• Interface & I/O Parallel memory interface with bidirectional data strobe (DQS) for source‑synchronous capture; 2.5 V I/O (SSTL_2 compatible) and differential clock inputs (CK/CK#).
• Power Operating supply range VDD/VDDQ = 2.3 V to 2.7 V (typical 2.5 V ± tolerance options cited in datasheet).
• Refresh & Reliability Auto refresh support (commercial: 64 ms, 8192 cycles) and options for concurrent auto precharge; four‑bank architecture for improved concurrency.
• Package & Temperature 66‑TSSOP (0.400", 10.16 mm width) package; commercial temperature rating 0°C to +70°C (TA).

Typical Applications

• Parallel DDR memory subsystems — Where a 256 Mbit (32M × 8) DDR SDRAM in a 66‑TSSOP footprint is required for on‑board volatile storage.
• Board‑level memory expansion — For designs that need a compact TSOP package with 2.5 V I/O and standard DDR timing features.
• Commercial temperature embedded equipment — Suitable for systems operating in the 0°C to +70°C range that require auto‑refresh and programmable burst operation.

Unique Advantages

• DDR double‑data‑rate throughput — Two data transfers per clock cycle provide higher effective bandwidth on a standard parallel DDR interface.
• Flexible burst and bank operation — Programmable burst lengths (2, 4, 8) and four internal banks enable adaptable access patterns and improved concurrency.
• Standard 2.5 V I/O compatibility — SSTL_2‑compatible I/O levels ease integration with existing 2.5 V memory controller interfaces.
• Compact TSOP footprint — 66‑TSSOP package (0.400" / 10.16 mm width) supports board‑level density requirements while maintaining standard pinout options.
• Commercial temperature rating — Specified 0°C to +70°C operation for a wide range of commercial embedded applications.

Why Choose MT46V32M8TG-75:G TR?

The MT46V32M8TG-75:G TR provides a verified 256 Mbit DDR SDRAM solution in a compact 66‑TSSOP package, combining DDR architecture, DLL timing alignment, programmable burst lengths and auto‑refresh capabilities. Its 2.5 V I/O and four‑bank organization offer integration flexibility for parallel DDR memory subsystems in commercial temperature designs.

This device is suitable for engineers and procurement teams specifying on‑board DDR memory where a 32M × 8 organization, 133 MHz clock capability, and standard TSOP packaging are required. The feature set supports predictable timing behavior and common refresh mechanisms to help maintain stable volatile memory operation in system designs.

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