MT46V64M4FG-5B:G TR

The MT46V64M4FG-5B:G TR is a 256 Mbit DDR SDRAM organized as 64M x 4 with a parallel memory interface in a 60-ball FBGA (8 × 14 mm) package. It implements an internal pipelined double-data-rate architecture with four internal banks and source-synchronous data capture for high-throughput read/write operation.

Designed for commercial-temperature systems (0°C to +70°C), this device delivers up to 200 MHz clock operation (speed grade -5B) with 2.5 V I/O and VDD supply operation, making it suitable for designs that require compact, parallel DDR memory with predictable timing and refresh behavior.

Key Features

• Core / Architecture  Internal pipelined DDR architecture with two data accesses per clock cycle and four internal banks to support concurrent operation.
• Memory Organization  256 Mbit total capacity configured as 64M × 4 (16 Meg × 4 × 4 banks).
• Performance / Timing  Speed grade -5B supports 200 MHz clock rate (CL = 3) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Data Capture and Signaling  Bidirectional data strobe (DQS) for source-synchronous capture, DQS edge-aligned for reads and center-aligned for writes, plus DLL to align DQ/DQS with CK (differential clock inputs CK/CK#).
• Burst and Refresh  Programmable burst lengths (2, 4, or 8) with auto refresh (8K refresh cycles) and self refresh options noted in the device family documentation.
• Power and I/O  VDD / VDDQ supply range 2.5 V ± tolerance (documented ranges include 2.5 V ±0.2 V and DDR400 option at 2.6 V ±0.1 V); 2.5 V I/O (SSTL_2-compatible behavior documented).
• Package & Temperature  60-ball FBGA (8 mm × 14 mm) supplier device package with operating ambient temperature 0°C to +70°C (commercial).

Typical Applications

• Commercial embedded systems  Provides compact 256 Mbit DDR memory for system memory, frame buffering or working storage in designs operating within the commercial temperature range.
• High-speed buffering and data capture  Source-synchronous DQS and differential clock inputs enable reliable read/write capture at DDR rates for buffering applications.
• Memory expansion for legacy parallel DDR interfaces  Parallel x4 organization and standard DDR command timing make it suitable for systems requiring parallel DDR SDRAM in a small FBGA footprint.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency beyond 200 MHz (speed grade -5B).
• Source-synchronous capture with DLL: DQS and DLL alignment reduce data timing uncertainty, improving reliable interface timing for high-speed reads and writes.
• Flexible burst modes: Programmable burst lengths (2/4/8) support varied access patterns for memory-efficient data transfers.
• Compact FBGA package: 60-ball FBGA (8 × 14 mm) delivers a small PCB footprint for space-constrained designs while retaining full DDR features.
• Commercial-temperature rated: Specified for 0°C to +70°C operation to match standard commercial electronics environments.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V64M4FG-5B:G TR provides a straightforward DDR SDRAM solution when you need a 256 Mbit, x4 parallel memory with predictable timing and source-synchronous data capture. Its -5B timing grade supports 200 MHz operation and it includes the DDR feature set—DLL, DQS, programmable burst lengths, and auto refresh—useful for designs requiring stable, repeated memory access patterns.

This device is suited to engineers and procurement teams targeting commercial-temperature systems that require compact packaging and standard DDR signaling at 2.5 V I/O levels. Its combination of performance, small FBGA footprint, and documented timing parameters supports integration into existing parallel DDR architectures with clear electrical and timing specifications.

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