MT46V64M8FN-6:D TR

The MT46V64M8FN-6:D TR is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball thin FBGA (10 × 12.5 mm) package. It implements a double-data-rate architecture with source-synchronous data strobes and an internal DLL for aligned data timing.

This device targets designs that require compact, board-level DDR memory with 2.3 V–2.7 V supply operation and commercial temperature rating (0°C to +70°C). Key attributes include 167 MHz clock operation (speed grade -6), programmable burst lengths, and standard DDR timing features for memory subsystems and embedded applications.

Key Features

• DDR SDRAM architecture Internal pipelined double-data-rate operation provides two data accesses per clock cycle and supports programmable burst lengths (2, 4, 8).
• Memory density & organization 512 Mbit capacity organized as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks).
• Timing and performance Speed grade -6 supports 167 MHz clock operation (CL = 2.5) with an access window and data-out timing defined in the datasheet; access time listed as 700 ps and write cycle time (word page) of 15 ns.
• Signal integrity & timing alignment Bidirectional data strobe (DQS) with edge-aligned READs and center-aligned WRITEs and an internal DLL to align DQ/DQS with CK for source-synchronous capture.
• Interface and I/O Differential clock inputs (CK/CK#), data mask (DM), and 2.5 V I/O signaling (SSTL_2 compatible behavior described in datasheet) for standard DDR interfaces.
• Power Supply range specified as 2.3 V to 2.7 V (VDD/VDDQ variants noted in datasheet), enabling typical 2.5 V DDR operation.
• Packaging & temperature 60-ball thin FBGA (10 mm × 12.5 mm) package in a commercial temperature rating of 0°C to +70°C.
• Refresh & reliability features Auto refresh (8192-cycle refresh period for commercial devices) and optional self-refresh modes described in the datasheet.

Typical Applications

• DDR memory subsystems Use as board-level DDR memory where a 512 Mbit density in a 60-ball FBGA is required for system memory implementations.
• Embedded systems Compact FBGA packaging and standard DDR interface make it suitable for space-constrained embedded designs operating within commercial temperature ranges.
• Consumer electronics modules Provides DDR SDRAM capacity and timing options for consumer-class applications that require 2.5 V I/O signaling and burst access modes.

Unique Advantages

• Established DDR timing options Speed-grade -6 and datasheet-defined timing (CL = 2.5 at 167 MHz) allow predictable integration into DDR timing budgets.
• Source-synchronous data capture DQS with DLL alignment improves read/write timing margins for systems using source-synchronous capture techniques.
• Compact FBGA footprint 60-ball FBGA (10 × 12.5 mm) provides a small board footprint for high-density board layouts.
• Standard DDR feature set Support for differential clocks, data mask, programmable burst lengths, and auto-refresh simplifies system-level memory control.
• Commercial temperature rating Specified 0°C to +70°C operating range for commercial-grade applications.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8FN-6:D TR delivers a 512 Mbit DDR SDRAM option with defined timing (167 MHz, CL = 2.5), source-synchronous DQS operation and a compact 60-ball FBGA package—features that help simplify integration into board-level DDR memory subsystems. Its 2.3 V–2.7 V supply range and standard DDR interface features align with common DDR design requirements.

This device is well suited for designers and OEMs who need a verified 512 Mbit DDR memory element in a small package for commercial-temperature applications, offering predictable timing behavior and the standard DDR control features documented in the manufacturer datasheet.

If you need pricing, availability, or a formal quote for MT46V64M8FN-6:D TR, submit a request for a quote or RFQ to receive detailed commercial information.