MT46V64M8FN-75:D

The MT46V64M8FN-75:D is a 512 Mbit DDR SDRAM organized as 64M × 8 in a 60-TFBGA package. It provides a parallel memory interface with a clock frequency of 133 MHz and an access time of 750 ps.

Designed for board-level memory integration, this device operates from a 2.3 V to 2.7 V supply and supports commercial temperature ranges (0 °C to 70 °C), offering a compact footprint (60-FBGA, 10 × 12.5 mm) suitable for space-constrained designs.

Key Features

• Memory Type & Organization 512 Mbit DDR SDRAM organized as 64M × 8, providing parallel DRAM storage in a single device.
• Interface Parallel memory interface compatible with standard DDR signaling at the specified clock frequency.
• Performance Clock frequency of 133 MHz with an access time of 750 ps and a write cycle time (word page) of 15 ns for predictable timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range to meet low-voltage system requirements.
• Package 60-TFBGA (60-FBGA, 10 × 12.5 mm) package case for compact board-level mounting and high-density placement.
• Operating Temperature Commercial operating temperature range of 0 °C to 70 °C (TA) for typical electronic applications.

Typical Applications

• Parallel DDR Memory Subsystems — Use as a 512 Mbit DDR SDRAM device with 64M × 8 organization for systems requiring parallel memory interfacing and fixed timing parameters.
• Board-Level DRAM Expansion — Adds 512 Mbit of volatile DRAM capacity in a compact 60-FBGA footprint for space-constrained PCBs.
• Low-Voltage Memory Designs — Suitable for designs operating within a 2.3 V to 2.7 V supply window that require DDR memory performance.
• Commercial Temperature Electronics — Appropriate for applications and assemblies operating within 0 °C to 70 °C.

Unique Advantages

• Compact FBGA Package: The 60-TFBGA (60-FBGA, 10 × 12.5 mm) package enables high-density board placement while maintaining a standard BGA mounting profile.
• DDR Parallel Interface: Provides a parallel DDR SDRAM architecture at 133 MHz for integration into existing parallel memory systems.
• Predictable Timing: Access time of 750 ps and a 15 ns write cycle time (word page) support consistent memory timing analysis during design.
• Low-Voltage Operation: 2.3 V to 2.7 V supply range supports lower-power memory designs and compatibility with low-voltage platforms.
• Commercial Temperature Range: Rated for 0 °C to 70 °C to match typical commercial electronic assemblies and environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8FN-75:D delivers a straightforward DDR SDRAM solution with clear, verifiable electrical and timing specifications. Its 512 Mbit density, 64M × 8 organization, and parallel interface make it suitable for designs that require compact, board-level DRAM expansion with defined timing and voltage parameters.

This device is well suited for engineers and procurement teams looking for a low-voltage, commercial-temperature DDR memory component in a 60-FBGA package, offering predictable integration for systems constrained by space and power budgets.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT46V64M8FN-75:D.