MT46V64M8P-5B AIT:J TR

The MT46V64M8P-5B AIT:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface. It implements an internal, pipelined double-data-rate (DDR) architecture for two data accesses per clock cycle and supports a 200 MHz clock rate for high-throughput parallel memory applications.

Targeted for automotive-grade systems, this device combines AEC‑Q100 qualification with a wide operating range and a compact 66‑TSSOP package, delivering verified reliability and a small footprint for constrained system designs that require DDR performance and automotive-grade qualification.

Key Features

• DDR architecture Internal pipelined double-data-rate operation provides two data transfers per clock cycle for improved throughput over single-data-rate memories.
• Memory organization & size 512 Mbit capacity organized as 64M × 8 with four internal banks to enable concurrent bank operation and flexible addressing.
• Performance Supports a 200 MHz clock frequency and an access time of 700 ps; key timing includes a write cycle time (word page) of 15 ns.
• Data strobes and timing Bidirectional data strobe (DQS) is transmitted/received with data for source‑synchronous capture; device includes an internal DLL to align DQ/DQS with CK.
• Flexible burst and masking Programmable burst lengths (2, 4, or 8) and data mask (DM) support controlled write masking and transfer granularity.
• Refresh and power options Auto refresh and self refresh options are supported; refresh timing variants include automotive timing options described in the device documentation.
• Supply and I/O Operates from a 2.3 V to 2.7 V supply range suitable for 2.5 V I/O signaling environments.
• Package 66‑pin TSSOP (0.400", 10.16 mm width) long‑lead TSOP option for improved reliability in board assembly and handling.
• Qualification and temperature AEC‑Q100 qualified and specified for an operating ambient temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Automotive memory subsystems AEC‑Q100 qualification and −40 °C to +85 °C range make the device suitable for automotive electronic modules requiring DDR buffering or working memory.
• High-speed parallel buffering 200 MHz DDR operation and 64M × 8 organization support high-throughput parallel interface buffering in embedded controllers and digital subsystems.
• System-level data capture Source-synchronous DQS and programmable burst lengths enable reliable, deterministic data capture for timing-sensitive read/write operations.

Unique Advantages

• Automotive qualification (AEC‑Q100): Provides documented qualification for use in automotive-rated designs and environments.
• DDR throughput in compact package: Delivers double‑data‑rate performance in a 66‑TSSOP footprint to save PCB space without sacrificing speed.
• Robust timing features: Internal DLL, bidirectional DQS, and programmable burst lengths help simplify timing closure and improve data integrity.
• Wide supply tolerance: 2.3 V to 2.7 V supply range accommodates 2.5 V I/O systems and provides margin for system power variations.
• Concurrent bank operation: Four internal banks allow overlapping operations for improved effective bandwidth in multi-transaction workloads.

Why Choose MT46V64M8P-5B AIT:J TR?

The MT46V64M8P-5B AIT:J TR combines DDR performance, automotive qualification, and a compact 66‑TSSOP package to address space‑constrained designs that require verified reliability and deterministic timing. Its DDR architecture, DQS support and internal DLL simplify high-speed interface timing while the 64M × 8 organization and four internal banks provide flexible memory management.

This device is well suited to engineers designing automotive or high-reliability embedded systems that need a 512 Mbit parallel DDR memory solution with defined operating temperature range and supplier documentation for system integration and qualification.

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