MT46V64M8P-5B L IT:F

The MT46V64M8P-5B L IT:F is a 512 Mbit Double Data Rate (DDR) SDRAM organized as 64M x 8 with a parallel memory interface. It implements an internal pipelined DDR architecture that provides two data accesses per clock cycle and supports source-synchronous data capture.

Designed for applications requiring industrial temperature operation and compact board-level mounting, this device combines 200 MHz clock operation and standard DDR features including programmable burst lengths, auto refresh, and a 66-pin TSSOP package.

Key Features

• Core / Architecture  Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data accesses per clock cycle and a DLL for alignment of DQ/DQS with CK.
• Memory Organization  512 Mbit total capacity arranged as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks).
• Performance / Timing  200 MHz clock frequency (speed grade -5B) with an access time of 700 ps and write cycle time (word page) of 15 ns; supports programmable burst lengths of 2, 4, or 8.
• Data Capture & Interface  Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; differential clock inputs (CK/CK#); parallel memory interface with data mask (DM).
• Power  VDD/VDDQ supply range +2.5 V to +2.7 V (2.5 V nominal); 2.5 V I/O compatible with SSTL_2 signaling.
• Refresh & Memory Management  Auto refresh supported with 8192-cycle refresh (64 ms); concurrent auto-precharge option available.
• Package & Mounting  66-pin TSSOP package (0.400", 10.16 mm width) for surface-mount board designs; longer-lead TSOP option noted for improved reliability.
• Temperature Range  Industrial operating temperature range: –40°C to +85°C (TA).

Typical Applications

• Embedded systems: Used as board-level volatile memory for embedded designs that require DDR SDRAM in a compact 66‑TSSOP package.
• Industrial control equipment: Provides DDR memory capacity and timing suitable for systems operating across an industrial temperature range (–40°C to +85°C).
• Legacy parallel DDR memory designs: Fits parallel DDR interface implementations that require 512 Mbit density and standard DDR feature set (DQS, DLL, burst lengths).

Unique Advantages

• DDR source‑synchronous data capture: Bidirectional DQS and DLL alignment support reliable read/write timing and data integrity.
• Two data transfers per clock cycle: Internal pipelined DDR architecture enables doubled data throughput relative to single-rate SDRAM at the same clock frequency.
• Industrial temperature rating: –40°C to +85°C operation supports deployment in temperature‑sensitive industrial environments.
• Compact TSOP package: 66‑pin TSSOP (10.16 mm width) provides a small board footprint for space-constrained designs.
• Flexible memory management: Programmable burst lengths, auto refresh and concurrent auto-precharge options simplify system memory control and sequencing.
• Standard 2.5 V signaling: VDD/VDDQ range and 2.5 V I/O compatibility align with SSTL_2 signaling levels for common DDR interfaces.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B L IT:F provides a balanced DDR SDRAM feature set—including source‑synchronous DQS, a DLL, programmable burst lengths, and auto refresh—packed into a compact 66‑TSSOP package. Its 512 Mbit density (64M × 8), 200 MHz clock capability, and 700 ps access time make it suitable for designs that require standard DDR performance with industrial temperature operation.

This device is appropriate for designers targeting embedded and industrial systems that need reliable parallel DDR memory in a surface-mount package. Documentation and device options (speed grade -5B, low‑power self‑refresh option, industrial temperature revision) support selection for production designs where the specified electrical and timing characteristics are required.

If you would like pricing, availability, or a formal quote for the MT46V64M8P-5B L IT:F, request a quote or contact sales to discuss your requirements and order options.