MT46V64M8P-5B:D

The MT46V64M8P-5B:D is a 512 Mbit parallel DDR SDRAM organized as 64M × 8 in a 66‑TSSOP package. It is a volatile DRAM device intended for designs requiring a parallel memory interface with 200 MHz clock operation.

Key attributes include a 200 MHz clock frequency, 700 ps access time and a 2.5 V–2.7 V supply range, making the device suitable for system memory expansion where compact package and defined timing performance are required.

Key Features

• Core / Memory Architecture 512 Mbit DRAM organized as 64M × 8; parallel DDR SDRAM architecture for standard parallel memory interfacing.
• Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page) for deterministic timing behavior.
• Power Operates from a 2.5 V to 2.7 V supply range to match common low‑voltage DDR system rails.
• Package 66‑TSSOP (0.400", 10.16 mm width) package for compact board-level integration and space-constrained designs.
• Interface Parallel memory interface suitable for direct integration into parallel DDR memory subsystems.
• Operating Temperature Specified for 0°C to 70°C ambient (TA) operation.
• Memory Format Volatile DRAM device intended for temporary data storage and buffering in system designs.

Typical Applications

• Embedded and System Memory Provides 512 Mbit of parallel DDR SDRAM capacity (64M × 8) for embedded systems and boards that require a 200 MHz DDR memory interface.
• On‑board Frame and Buffer Storage Suitable for applications that need compact, board-mounted DRAM in a 66‑TSSOP package for frame buffering or temporary data staging with 700 ps access time.
• Parallel‑interface Memory Expansion Fits designs seeking additional parallel DRAM capacity with defined timing: 15 ns write cycle and 200 MHz clock operation.

Unique Advantages

• Compact, industry-standard package: 66‑TSSOP (0.400", 10.16 mm) enables integration into space-constrained PCBs while maintaining standard footprint dimensions.
• Deterministic timing performance: 200 MHz clock and 700 ps access time provide predictable timing for memory subsystem design and verification.
• Standard DDR interface: Parallel DDR SDRAM organization (64M × 8) simplifies integration into parallel memory architectures.
• Board-level power compatibility: 2.5 V–2.7 V supply range aligns with common DDR power rails for straightforward power supply design.
• Operational temperature defined: Rated for 0°C to 70°C ambient (TA), allowing selection based on environmental requirements.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B:D offers a compact, parallel DDR SDRAM solution with clear, verifiable electrical and timing specifications—200 MHz clock, 700 ps access time, 15 ns write cycle time, and 2.5 V–2.7 V supply—packaged in a 66‑TSSOP footprint. These attributes make it well suited for engineers building board-level memory subsystems that require predictable timing and a small form factor.

This device is appropriate for designs needing 512 Mbit of volatile memory with parallel interface integration. Its defined operating range and package make it a practical choice for engineers focused on reliable system memory expansion and on‑board buffering in space-constrained layouts.

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