MT46V64M8P-5B:F TR

The MT46V64M8P-5B:F TR is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements a double-data-rate architecture with differential clock inputs and internal DLL for source-synchronous data capture.

Designed for commercial-temperature systems, this device offers a 200 MHz clock capability, 700 ps access window and 2.5 V supply operation, providing a compact, board-level DDR memory option in a 66‑TSSOP package.

Key Features

• DDR Architecture Internal, pipelined double-data-rate operation delivering two data transfers per clock cycle with bidirectional DQS for source-synchronous capture.
• Memory Organization 512 Mbit configured as 64M × 8 with four internal banks to support concurrent operations and programmable burst lengths (2, 4, or 8).
• Clock and Timing Rated for up to 200 MHz clock frequency (speed grade -5B) with data-out window and access timing parameters; access window specified as ±0.70 ns and typical access timing 700 ps.
• Power VDD / VDDQ operating range of 2.5 V ± tolerances (2.5 V to 2.7 V specified), supporting SSTL_2 compatible I/O signaling.
• Write and Refresh Write cycle time (word page) of 15 ns and support for auto-refresh (8K refresh cycle count documented for commercial devices).
• Package 66‑TSSOP (0.400", 10.16 mm width) plastic package for board-level mounting; longer‑lead TSOP option noted for reliability.
• Operating Range Commercial temperature rating with specified operating ambient range of 0°C to 70°C (TA).

Typical Applications

• Embedded Memory Subsystems Provides 512 Mbit DDR in a 66‑TSSOP package for embedded systems requiring parallel DDR SDRAM with 2.5 V I/O.
• Board-Level DDR Expansion Suitable for on‑board memory expansion where a 64M × 8 organization and four internal banks improve concurrent access and burst transfers.
• Commercial Electronics Targeted at commercial-temperature equipment (0°C to 70°C) that require standard DDR timing and refresh characteristics.

Unique Advantages

• Double-Data-Rate Performance: Two data transfers per clock cycle via DDR architecture and DQS support improve effective bandwidth versus single-data-rate memory.
• Compact, Standard Package: 66‑TSSOP footprint (10.16 mm width) simplifies integration into existing board designs while maintaining a high-density memory option.
• Defined Timing and Speed Grade: Speed grade -5B provides a 200 MHz clock rating with specified data-out and access windows for predictable timing design.
• SSTL_2-Compatible I/O Voltage: 2.5 V VDD/VDDQ operation aligns with standard 2.5 V SSTL_2 signaling for compatibility with matching interfaces.
• Standard Refresh and Burst Options: Supports auto-refresh (8K) and programmable burst lengths (2, 4, 8) for flexible memory access patterns.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B:F TR delivers a practical, board-level DDR SDRAM solution with a 512 Mbit capacity, 64M × 8 organization and a commercial temperature rating. Its DDR internal architecture, defined timing (200 MHz clock, 700 ps access window) and 2.5 V I/O make it suitable for systems that require predictable, parallel DDR memory behavior in a compact 66‑TSSOP package.

As part of Micron’s 512 Mb DDR SDRAM family, this device suits designs where verified timing parameters, standard refresh/burst options, and a compact footprint help streamline integration and maintainable BOM choices for commercial electronic products.

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