MT46V64M8P-6T L:F

The MT46V64M8P-6T L:F is a 512Mbit DDR SDRAM device in a 66-pin TSSOP package, organized as 64M × 8 with four internal banks. It provides double-data-rate (DDR) synchronous DRAM architecture with source-synchronous data capture and a parallel memory interface suitable for commercial-temperature systems.

Designed for board-level integration where a compact TSOP footprint and DDR performance are required, this device offers programmable burst lengths, differential clock inputs, and standard DDR timing options to support system memory buffering and high-throughput data transfers in commercial embedded applications.

Key Features

• Core Architecture Internal, pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization & Density 512 Mbit capacity organized as 64M × 8 with a parallel memory interface.
• Performance & Timing Rated for a clock frequency up to 167 MHz (speed grade 6T) with an access time of 700 ps and programmable burst lengths of 2, 4, or 8.
• Data Capture & Interface Bidirectional data strobe (DQS) transmitted/received with data (source-synchronous), differential clock inputs (CK/CK#), and DLL alignment of DQ/DQS with CK.
• Power & I/O VDD/VDDQ around 2.5 V (supply range 2.3 V to 2.7 V) with 2.5 V I/O compatible with SSTL_2 signaling.
• Refresh & Self-Refresh Auto refresh with 8K refresh cycles (64 ms for commercial devices) and self-refresh support (not available on AT devices per datasheet notes).
• Package 66‑TSSOP (0.400", 10.16 mm width) plastic TSOP package for compact board-level mounting.
• Operating Range Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

• Commercial embedded systems — Provides 512 Mbit DDR memory in a compact 66‑TSSOP footprint for general-purpose embedded platforms operating at commercial temperatures.
• Board-level memory buffering — Parallel DDR interface and programmable burst lengths suit buffering and temporary storage tasks on system boards.
• Legacy/space-constrained designs — 66‑TSSOP package enables migration or upgrade paths where a small-profile TSOP is required.

Unique Advantages

• Compact TSOP footprint: 66‑TSSOP package (0.400", 10.16 mm) conserves board area while providing 512 Mbit density.
• DDR performance at 167 MHz: Speed grade 6T supports 167 MHz operation with a 700 ps access time for higher throughput compared with single-data-rate memory at similar form factors.
• Source-synchronous DQS support: Bidirectional DQS and DLL alignment improve data capture reliability for read and write operations.
• Flexible burst operation: Programmable burst lengths (2, 4, 8) allow tuning of transfer granularity to match system access patterns.
• SSTL_2 compatible I/O: 2.5 V I/O signaling enables compatibility with common DDR system interfaces operating around 2.5 V.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8P-6T L:F balances DDR performance, 512 Mbit density, and a compact 66‑TSSOP package for commercial-temperature embedded designs. Its source-synchronous DQS, differential clock inputs, and programmable burst modes make it suitable for systems that require reliable parallel DDR SDRAM operation in a small footprint.

As a Micron Technology device, it provides a clearly defined supply voltage range (2.3–2.7 V), commercial operating temperature rating (0°C to +70°C), and standard DDR features such as auto refresh and self-refresh capability. This combination makes it appropriate for designers seeking a proven DDR memory option for board-level integration and memory buffering in commercial applications.

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