MT46V64M8P-6T:D
| Part Description |
IC DRAM 512MBIT PAR 66TSOP |
|---|---|
| Quantity | 1,533 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8P-6T:D – IC DRAM 512MBIT PAR 66TSOP
The MT46V64M8P-6T:D is a 512 Mbit volatile DRAM device implementing SDRAM - DDR technology with a parallel memory interface. It provides a 64M × 8 organization, targeting applications that require on-board DDR DRAM in a 66-TSSOP package.
Key attributes include a 167 MHz clock frequency, 700 ps access time, 15 ns write cycle time (word/page), a 2.3 V–2.7 V supply range, and an operating temperature range of 0°C to 70°C.
Key Features
- Memory Core 512 Mbit DRAM organized as 64M × 8, implemented as volatile SDRAM - DDR.
- Performance 167 MHz clock frequency with a 700 ps access time and 15 ns write cycle time (word/page) for predictable timing behavior.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Interface Parallel memory interface compatible with parallel DDR SDRAM designs.
- Package Supplied in a 66-TSSOP (0.400", 10.16 mm width) package for surface-mount PCB integration.
- Operating Range Specified for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Parallel DDR memory subsystems Use where a 64M × 8 DDR SDRAM device with a parallel interface is required on the board.
- On-board buffering and frame storage Suitable for designs that need a 512 Mbit volatile memory element with defined timing characteristics.
- Embedded system memory expansion Integrates into systems requiring additional DRAM capacity in a 66-TSSOP footprint and 2.3 V–2.7 V supply domain.
Unique Advantages
- Compact TSOP footprint: 66-TSSOP package provides a low-profile option for PCB layouts requiring a 10.16 mm width package.
- Defined timing metrics: 700 ps access time and 15 ns write cycle time (word/page) enable deterministic memory timing for system design.
- Standard DDR SDRAM architecture: Parallel DDR SDRAM technology and 64M × 8 organization simplify mapping into existing parallel memory interfaces.
- Broad supply tolerance: 2.3 V–2.7 V operating range supports designs using common DDR-compatible power rails.
- Commercial temperature rating: Specified for 0°C to 70°C operation for general-purpose, ambient-temperature applications.
Why Choose IC DRAM 512MBIT PAR 66TSOP?
The MT46V64M8P-6T:D provides a straightforward DDR SDRAM building block with explicit timing and power specifications, making it suitable for designs that need a 512 Mbit parallel DRAM in a compact 66-TSSOP package. Its combination of 167 MHz clocking, 700 ps access time, and 2.3 V–2.7 V supply support predictable integration into parallel memory subsystems.
Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying a known DDR SDRAM configuration (64M × 8) with defined package and temperature characteristics.
Request a quote or submit an inquiry to receive pricing and availability information for the MT46V64M8P-6T:D.
