MT46V64M8P-6T L:F TR

The MT46V64M8P-6T L:F TR is a 512 Mbit DDR SDRAM configured as 64M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate pipelined architecture with source‑synchronous DQS to deliver two data transfers per clock cycle for systems that require synchronous DRAM memory.

Targeted for commercial-temperature designs, this device provides a 167 MHz clock rating (speed grade 6T), 2.3 V–2.7 V supply range, and timing characteristics suitable for applications requiring compact TSOP mounting and SSTL_2‑compatible I/O signaling.

Key Features

• Core / Architecture  Internal pipelined DDR architecture with four internal banks and bidirectional data strobe (DQS) for source‑synchronous data capture; supports programmable burst lengths of 2, 4, or 8.
• Memory Organization & Capacity  512 Mbit density organized as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks).
• Performance & Timing  Rated for a 167 MHz clock (speed grade 6T) with an access window of ±0.70 ns and a data‑out window around 2.0 ns; write cycle time (word/page) of 15 ns and access time ~700 ps.
• Voltage & I/O  Supply range 2.3 V to 2.7 V; supports 2.5 V I/O signaling compatible with SSTL_2 levels as indicated in the device specification.
• Signal & Timing Support  Differential clock inputs (CK/CK#), DLL for alignment of DQ/DQS with CK, DQS edge‑alignment for READ and center‑alignment for WRITE operations, and data mask (DM) support.
• Package & Temperature  Longer‑lead 66‑TSSOP / 66‑TSOP package (0.400", 10.16 mm width) intended for surface‑mount board designs; commercial operating temperature 0°C to +70°C.
• Refresh & Power Management  Standard auto‑refresh and 8192‑cycle refresh support (64 ms for commercial devices) with optional self‑refresh configurations documented in the device specification.

Typical Applications

• Memory subsystems on compact PCBs  Use where a 512 Mbit DDR SDRAM in a 66‑pin TSOP footprint is required for board‑level memory expansion.
• Synchronous data buffering  Suitable for systems that use source‑synchronous DQS and require pipelined DDR transfers at up to 167 MHz.
• Designs requiring SSTL_2 I/O levels  For platforms that implement 2.5 V SSTL_2 compatible interfaces and need a parallel DDR memory device.

Unique Advantages

• Double‑data‑rate transfers: Internal DDR pipeline and bidirectional DQS enable two data accesses per clock cycle for increased throughput within the rated clock frequency.
• Flexible burst and timing options: Programmable burst lengths (2, 4, 8) and documented timing windows (CL options and data‑out/access windows) simplify timing tuning for target systems.
• SSTL_2 compatible I/O: 2.3 V–2.7 V supply and 2.5 V I/O support allow integration with SSTL_2 signaling domains.
• Compact package option: 66‑TSSOP/TSOP (10.16 mm width) provides a space‑efficient package for high‑density PCB layouts.
• Commercial temperature rating: 0°C to +70°C operating range for standard commercial applications.

Why Choose MT46V64M8P-6T L:F TR?

The MT46V64M8P-6T L:F TR delivers 512 Mbit of DDR SDRAM memory in a 64M × 8 organization with timing characteristics and interface features tailored for synchronous, source‑synchronous designs. Its 66‑pin TSSOP package and SSTL_2‑compatible voltage range make it suitable for compact board designs that require pipelined DDR operation at up to 167 MHz (speed grade 6T).

This device is a practical choice for engineers specifying board‑level DDR memory where predictable timing behavior, programmable burst lengths, and standard refresh/self‑refresh options are required within a commercial temperature range.

Request a quote or submit an inquiry to receive pricing and availability information for the MT46V64M8P-6T L:F TR for your design or BOM planning needs.