MT46V64M8P-6T:F TR

The MT46V64M8P-6T:F TR is a 512 Mbit Double Data Rate (DDR) SDRAM organized as 64M × 8 with four internal banks. It provides parallel DDR memory in a 66‑TSSOP (0.400", 10.16 mm width) package and is manufactured by Micron Technology Inc.

Built for systems requiring pipelined DDR operation, the device supports a 167 MHz clock rate (DDR data transfers), a 700 ps access time, and a 2.3 V–2.7 V supply range. Typical uses are board‑level memory expansion and high‑throughput buffering in commercial temperature environments (0°C to +70°C).

Key Features

• Core Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data accesses per clock cycle.
• Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks).
• Performance & Timing Rated for a 167 MHz clock frequency with a 700 ps access time; timing grade -6T specified for DDR333 operation.
• Data Handling Bidirectional data strobe (DQS) transmitted/received with data and programmable burst lengths of 2, 4, or 8 to match transfer patterns.
• Interface & Signaling Parallel DDR interface with differential clock inputs (CK/CK#) and 2.5 V I/O (SSTL_2 compatible) behavior (VDD/VDDQ nominally 2.5 V, device supply range 2.3 V–2.7 V).
• Refresh & Reliability Standard auto refresh with 8192-cycle refresh intervals (64 ms for commercial range) and support for self refresh options documented in the datasheet.
• Package 66‑TSSOP (0.400" / 10.16 mm width) plastic package for PCB-level integration and assembly.
• Operating Range Commercial temperature rating: 0°C to +70°C (TA) per product data.
• Write Cycle Word page write cycle time of 15 ns for page write performance planning.

Typical Applications

• Parallel DDR system memory For designs requiring 512 Mbit parallel DDR SDRAM with 64M × 8 organization and four internal banks.
• Board-level memory expansion 66‑TSSOP package supports compact PCB implementations that need DDR memory in a small outline package.
• Commercial temperature equipment Suitable for use in devices and systems specified for 0°C to +70°C ambient operation.
• High-throughput buffering Programmable burst lengths and DDR operation at 167 MHz enable efficient high-rate data transfers and buffering on system buses.

Unique Advantages

• 512 Mbit density in a compact TSOP Provides substantial memory capacity while maintaining a small 66‑TSSOP footprint for board-level designs.
• DDR pipelined architecture Two data transfers per clock cycle increase effective data throughput without changing clock frequency.
• SSTL_2 compatible I/O and standard supply window 2.3 V–2.7 V supply and 2.5 V I/O signaling align with common DDR interface standards for straightforward integration.
• Flexible transfer modes Programmable burst lengths (2, 4, 8) and four internal banks support varied access patterns and concurrent operations.
• Commercial temperature grading Rated for 0°C to +70°C operation, matching many industrial and consumer system requirements.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8P-6T:F TR positions itself as a practical DDR SDRAM option for systems needing 512 Mbit of parallel memory in a compact 66‑TSSOP package. With DDR pipelined architecture, programmable burst lengths, and a 167 MHz clock rating, it addresses designs that require higher data throughput while operating from a 2.3 V–2.7 V supply.

This Micron‑manufactured device is suitable for commercial temperature applications and board-level integration where a balance of density, timing performance, and standard SSTL_2 I/O signaling simplifies system design and memory subsystem planning.

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