MT46V64M8P-75 L:D TR

The MT46V64M8P-75 L:D TR is a 512 Mbit parallel DRAM device implemented in SDRAM - DDR technology. It is organized as 64M × 8 with a parallel memory interface and specified timing and voltage characteristics suitable for integration into designs requiring defined DDR memory behavior.

Packaged in a 66-TSSOP (0.400", 10.16 mm width), this volatile memory device targets applications where compact footprint, controlled timing (133 MHz clock, 750 ps access time), and low-voltage operation are required.

Key Features

• Core / Memory: 512 Mbit DRAM organized as 64M × 8, implemented using SDRAM - DDR technology.
• Performance: 133 MHz clock frequency with 750 ps access time and a write cycle time (word/page) of 15 ns for deterministic memory timing.
• Interface: Parallel memory interface and DRAM memory format for direct integration with parallel memory subsystems.
• Power: Operates from a 2.3 V to 2.7 V supply, supporting low-voltage system designs.
• Package: 66-TSSOP (0.400", 10.16 mm width) package case; supplier device package listed as 66-TSOP for compact board-level implementation.
• Operating Range: Specified ambient operating temperature of 0°C to 70°C (TA).
• Memory Type: Volatile DRAM suitable for transient data storage in system memory arrays.

Typical Applications

• Parallel DDR memory subsystems: Provides 512 Mbit DDR SDRAM organized as 64M × 8 for systems requiring parallel DRAM interfacing with defined timing parameters.
• Space-constrained board designs: The 66-TSSOP (10.16 mm width) package supports compact PCB layouts where board area is limited.
• Low-voltage systems: Suited for designs operating within a 2.3 V–2.7 V supply window that require DDR memory functionality.

Unique Advantages

• Defined DDR timing: 133 MHz clock and 750 ps access time provide clear, verifiable timing characteristics for system timing analysis.
• Compact package option: 66-TSSOP package reduces board footprint compared with larger packages while retaining necessary pin count for parallel operation.
• Low-voltage operation: 2.3 V–2.7 V supply range enables use in power-sensitive designs that require lower operating voltages.
• Deterministic write timing: 15 ns write cycle time (word/page) offers predictable write behavior for memory subsystem scheduling.
• Clear thermal bounds: Rated for 0°C to 70°C ambient operation, allowing straightforward thermal planning for typical commercial environments.

Why Choose MT46V64M8P-75 L:D TR?

The MT46V64M8P-75 L:D TR positions itself as a compact, low-voltage DDR SDRAM option providing a defined set of timing and electrical specifications—133 MHz clocking, 750 ps access time, and a 15 ns write cycle—combined with a 66-TSSOP package. These attributes make it appropriate for designs that require verified parallel DDR memory behavior in a small package footprint.

Designed and manufactured by Micron Technology Inc., this device is suited for engineers and procurement teams specifying a 512 Mbit volatile DRAM component with explicit electrical, timing, and package details for integration into controlled commercial-temperature systems.

Request a quote or submit an availability inquiry to discuss pricing and lead times for the MT46V64M8P-75 L:D TR.