MT46V64M8P-75Z:D TR

The MT46V64M8P-75Z:D TR is a 512 Mbit volatile DRAM organized as 64M × 8 and implemented using DDR SDRAM technology. Packaged in a 66‑TSSOP (0.400", 10.16 mm width), it provides a parallel memory interface with a 133 MHz clock specification and defined timing characteristics.

This device is intended for board-level integration where a compact 66‑TSOP package, a 2.3 V to 2.7 V supply range, and operating temperatures from 0 °C to 70 °C are required.

Key Features

• Memory Type & Technology SDRAM – DDR volatile memory; organized as 64M × 8 for a total of 512 Mbit.
• Performance Specified for a 133 MHz clock frequency with an access time of 750 ps to support timing-sensitive read/write operations.
• Timing Write cycle time (word page) specified at 15 ns, providing a defined write timing characteristic for system integration.
• Power Operates from a 2.3 V to 2.7 V supply, enabling designs constrained to this supply window.
• Package 66‑TSSOP (0.400", 10.16 mm width) surface-mount package for compact board-level placement.
• Environmental Range Rated for an ambient operating temperature range of 0 °C to 70 °C (TA).
• Interface Parallel memory interface suitable for parallel DDR memory architectures.

Typical Applications

• Parallel-interface memory modules Use as a 512 Mbit parallel DDR SDRAM (64M × 8) in designs that require a defined clock frequency and access timing.
• Compact board-level memory Provides a 512 Mbit volatile memory option in a 66‑TSSOP package for space-constrained PCB layouts operating within 0 °C to 70 °C.
• Timing-sensitive designs Applicable where a 133 MHz clock, 750 ps access time, and 15 ns write cycle time (word page) are part of system timing requirements.

Unique Advantages

• Clear timing and throughput parameters: 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time provide explicit metrics for system timing analysis.
• Compact TSOP footprint: 66‑TSSOP package (10.16 mm width) enables integration into dense board layouts.
• Standard DDR SDRAM organization: 64M × 8 arrangement totaling 512 Mbit simplifies capacity planning and memory mapping.
• Defined supply range: 2.3 V to 2.7 V supply requirement supports designs targeting that voltage window.
• Manufacturer backing: Supplied by Micron Technology Inc., identified as MT46V64M8P-75Z:D TR for procurement and BOM consistency.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-75Z:D TR positions itself as a straightforward DDR SDRAM option when a 512 Mbit, 64M × 8 organization is required in a 66‑TSSOP package. Its explicit clock, access time, and write cycle specifications make it suitable for designs where those timing parameters must be met and verified.

This device is appropriate for engineers and procurement teams specifying parallel-interface volatile memory within a 2.3 V–2.7 V supply environment and a 0 °C–70 °C ambient range, offering defined mechanical, electrical, and timing characteristics for board-level memory integration.

Request a quote or submit an inquiry to obtain pricing and availability for the MT46V64M8P-75Z:D TR.