MT46V64M8T67A3WC1

The MT46V64M8T67A3WC1 is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 64M × 8 and delivered in a die package.

Targeted for designs that require parallel DDR memory, this device provides a defined write cycle time and a specified operating voltage and temperature range to support system-level integration and thermal requirements.

Key Features

• Memory Type & Format 512 Mbit volatile memory in DRAM format using SDRAM - DDR technology.
• Memory Organization Organized as 64M × 8 to simplify bus and data-path design for parallel interfaces.
• Interface Parallel memory interface compatible with DDR SDRAM signaling.
• Performance Write cycle time (word page) specified at 15 ns for predictable write timing.
• Power Operates from a supply voltage range of 2.3 V – 2.7 V.
• Package Supplied as a die, enabling die-level integration into custom packages or modules.
• Temperature Range Rated for operation from -40°C to 85°C (TA), supporting extended temperature applications.

Typical Applications

• Embedded memory expansion Use where a 512 Mbit volatile DDR memory is required for system buffering or working memory.
• Systems with parallel DDR interfaces Intended for designs that employ parallel SDRAM - DDR signaling and require a 64M × 8 organization.
• Temperature-sensitive deployments Suitable for applications requiring operation across -40°C to 85°C (TA).

Unique Advantages

• DDR SDRAM architecture: Provides standard SDRAM - DDR technology in a 512 Mbit device for parallel memory needs.
• Defined timing: A 15 ns write cycle time offers a clear timing parameter for system design and integration.
• Die form factor: Delivered as a die to enable direct die-level integration into custom assemblies or multi-die modules.
• Wide operating temperature: -40°C to 85°C (TA) rating supports deployments with extended temperature requirements.
• Controlled supply range: Operation from 2.3 V – 2.7 V allows designers to align power-domain specifications with system requirements.

Why Choose MT46V64M8T67A3WC1?

The MT46V64M8T67A3WC1 positions itself as a straightforward 512 Mbit DDR SDRAM die for designs that require parallel DRAM memory with defined timing, voltage, and temperature characteristics. Its 64M × 8 organization and 15 ns write cycle time provide designers with specific, verifiable parameters to integrate into memory subsystems.

This device is suited to customers and designs that prefer die-level integration and need a DDR SDRAM solution with a clear supply-voltage window and extended ambient operating temperature. Its specification-focused attributes support predictable system behavior and ease of integration where those exact parameters are required.

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