MT46V64M8P-75:D TR

The MT46V64M8P-75:D TR is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It provides a 64M × 8 memory organization in a compact 66‑TSSOP package for systems that require parallel DDR memory density and defined timing characteristics.

Key attributes include a 133 MHz clock frequency, 750 ps access time, a 15 ns write cycle time (word page), and a supply voltage range of 2.3 V to 2.7 V, making it suitable for designs that require specified DDR timing and a small-footprint package within a 0 °C to 70 °C ambient range.

Key Features

• Memory Architecture DDR SDRAM technology with a 64M × 8 organization delivering a total memory size of 512 Mbit in a parallel DRAM format.
• Performance Operates at a 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word page), providing defined timing characteristics for system memory timing budgets.
• Power Supported supply voltage range of 2.3 V to 2.7 V for device operation.
• Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package for compact board-level integration.
• Temperature Range Specified for operation from 0 °C to 70 °C (TA).
• Memory Interface & Format Parallel memory interface in DRAM format suitable for systems designed around parallel DDR memory architectures.

Typical Applications

• Embedded systems Provides 512 Mbit parallel DDR storage for embedded designs that require defined DDR timing and modest temperature range operation.
• Consumer electronics Compact 66‑TSSOP packaging and 512 Mbit density make the device suitable for space-constrained consumer devices needing parallel DRAM.
• Memory expansion modules Can be used where a 64M × 8 DDR memory organization is required to meet system memory capacity and timing specifications.

Unique Advantages

• 512 Mbit density: Provides a 64M × 8 organization to meet specific capacity needs without multiple devices.
• Defined timing performance: 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time offer predictable timing for system design.
• Compact 66‑TSSOP package: Small footprint (0.400" / 10.16 mm width) simplifies board-level integration in constrained layouts.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports designs targeting lower-voltage DDR operation.
• Parallel DDR interface: Standard parallel DRAM interface for architectures requiring DDR signalling and organization.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-75:D TR positions itself as a compact, specification-driven DDR SDRAM device for designs that require a 512 Mbit parallel DRAM solution with clearly defined timing and voltage parameters. Its combination of 64M × 8 organization, 133 MHz clock operation, and a 66‑TSSOP package addresses integration and performance needs where footprint and predictable timing are important.

This device is suited to engineers and purchasing teams specifying parallel DDR memory for embedded or consumer applications within the 0 °C to 70 °C ambient range. The explicit electrical and timing specifications support straightforward incorporation into systems that demand verifiable DDR behavior and compact packaging.

If you need pricing, availability, or a formal quote for MT46V64M8P-75:D TR, submit a request to receive a quote or further procurement details from our team.