MT46V64M8P-75 IT:D TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 142 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8P-75 IT:D TR – IC DRAM 512MBIT PARALLEL 66TSOP
The MT46V64M8P-75 IT:D TR from Micron Technology Inc. is a 512 Mbit DDR SDRAM device organized as 64M x 8 and presented in a 66-TSSOP (0.400", 10.16 mm width) package. It provides a parallel memory interface and is designed as volatile DRAM for applications that require external SDRAM capacity.
This device supports a 133 MHz clock frequency with an access time of 750 ps, operates from a 2.3 V to 2.7 V supply and across an ambient temperature range of -40°C to 85°C (TA), offering compact packaging and specified timing for system-level memory implementations.
Key Features
- Core / Memory Architecture DDR SDRAM technology organized as 64M x 8 for a total memory size of 512 Mbit.
- Performance 133 MHz clock frequency with an access time of 750 ps and a write cycle time (word page) of 15 ns.
- Interface Parallel memory interface suitable for systems using external DRAM modules.
- Power Low-voltage operation with a supply range of 2.3 V to 2.7 V.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for space-conscious board layouts.
- Operating Range Specified ambient operating temperature from -40°C to 85°C (TA).
- Memory Format Volatile DRAM suitable for temporary storage and active system memory needs.
Unique Advantages
- 512 Mbit density: Delivers a half-gigabit memory capacity in a single 66-TSSOP package for compact system designs.
- Deterministic timing: Explicit access time (750 ps) and write cycle time (15 ns) values aid timing analysis and system integration.
- Parallel interface: Standard parallel memory interface simplifies integration into designs that require external DRAM connections.
- Low-voltage operation: 2.3 V to 2.7 V supply range supports designs targeting reduced power rails.
- Industrial temperature range: -40°C to 85°C (TA) operation supports deployments across a broad ambient range.
- Compact package footprint: 66-TSSOP packaging (10.16 mm width) enables higher board density and conservative PCB area usage.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V64M8P-75 IT:D TR positions itself as a straightforward DDR SDRAM building block for designs requiring 512 Mbit of volatile memory in a compact 66-TSSOP package. Its published timing (750 ps access time, 15 ns write cycle), 133 MHz clock frequency and parallel interface make it suitable for systems where explicit timing and board-space economy matter.
This device is appropriate for engineers specifying external DRAM with defined electrical and thermal limits—2.3 V to 2.7 V supply range and -40°C to 85°C ambient operation—providing predictable behavior for integration, validation and long-term deployment considerations.
Request a quote or submit an inquiry to receive pricing, lead-time and availability information for the MT46V64M8P-75 IT:D TR.
