MT46V64M8P-75 L:D

The MT46V64M8P-75 L:D is a 512 Mbit parallel DRAM device implemented as a 64M × 8 DDR SDRAM memory. It provides volatile storage with a parallel memory interface and is supplied in a 66‑TSSOP package.

With a 133 MHz clock frequency, 750 ps access time and a nominal supply range of 2.3 V to 2.7 V, this device is suitable for designs that require mid-density DDR parallel memory in a compact 66‑TSOP footprint and a commercial operating temperature range.

Key Features

• Core / Technology DDR SDRAM architecture providing volatile dynamic memory in a parallel interface format.
• Memory Organization 512 Mbit capacity arranged as 64M × 8, enabling byte-wide parallel access.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word/page) for predictable timing in memory subsystems.
• Power Operates from 2.3 V to 2.7 V, supporting low-voltage board designs.
• Package 66‑TSSOP (0.400", 10.16 mm width) package case (supplier device package: 66‑TSOP) for surface-mount assembly.
• Operating Temperature Commercial range 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems — Provides 64M × 8 parallel DDR storage where byte-wide DRAM is required.
• On-board buffer memory — 512 Mbit capacity and 133 MHz clocking suit buffer and temporary storage implementations.
• Compact PCB designs — 66‑TSSOP package enables integration of mid-density DRAM in space-constrained assemblies.

Unique Advantages

• Appropriate mid-density capacity: 512 Mbit (64M × 8) offers a balance between density and board-level integration for parallel memory needs.
• Deterministic timing characteristics: 750 ps access time and 15 ns write cycle time (word/page) provide measurable performance for system timing design.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports lower-power system designs and compatibility with low-voltage logic domains.
• Compact surface-mount package: 66‑TSSOP (10.16 mm width) simplifies placement on dense PCBs while preserving necessary pin count for parallel interface.
• Commercial temperature rating: 0°C to 70°C (TA) is suitable for many standard electronic applications.

Why Choose MT46V64M8P-75 L:D?

The MT46V64M8P-75 L:D positions itself as a practical DDR SDRAM option when a 512 Mbit parallel memory with defined timing and low-voltage operation is required. Its 64M × 8 organization, 133 MHz clocking, and 66‑TSSOP package make it suitable for systems that need compact, byte-wide DRAM integration.

This device is well suited for engineers and procurement teams specifying mid-density parallel DRAM in commercial-temperature designs where predictable access times, a narrow supply voltage window, and a standardized surface-mount package are important for system integration and long-term board-level reliability.

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