MT46V64M8P-6T:F

The MT46V64M8P-6T:F is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate architecture with internal DLL and source-synchronous DQS signaling to support two transfers per clock cycle.

Designed for commercial temperature applications, this IC targets systems that require high-speed parallel DDR memory with programmable burst control, auto-refresh support, and a 2.3 V–2.7 V supply range for core and I/O operation.

Key Features

• Core / Architecture  Internal, pipelined DDR architecture with four internal banks and a DLL for DQ/DQS alignment; two data accesses per clock cycle.
• Memory Organization  512 Mbit capacity arranged as 64M × 8 with four banks (16 Meg × 8 × 4 banks).
• Interface & Signaling  Parallel DDR interface with bidirectional data strobe (DQS), differential clock inputs (CK/CK#), and data mask (DM) support.
• Performance / Timing  Rated for 167 MHz clock frequency (speed grade -6T), access window ~700 ps and write cycle time (word page) of 15 ns; programmable burst lengths of 2, 4, or 8.
• Power  Supply range specified at 2.3 V to 2.7 V; datasheet references 2.5 V I/O (SSTL_2 compatible).
• Refresh & Self-Management  Auto-refresh supported with 8K refresh cycles; self-refresh options are documented (standard and low-power self-refresh available as options in the product family).
• Package & Temperature  66‑TSSOP package (0.400", 10.16 mm width); commercial operating temperature 0°C to +70°C (TA).

Typical Applications

• Embedded memory subsystems  Parallel DDR SDRAM for systems requiring 512 Mbit volatile storage within a 66‑pin TSSOP footprint and commercial temperature operation.
• Consumer electronics  Use as system or graphics memory where 2.3 V–2.7 V supply operation and source-synchronous DQS signaling are required.
• Industrial equipment (commercial-temperature range)  Memory for control and data buffering in applications operating within 0°C to +70°C.

Unique Advantages

• Double-data-rate throughput: Enables two data transfers per clock cycle for improved effective bandwidth at the specified clock rates.
• Source‑synchronous data capture: Bidirectional DQS with DLL alignment improves timing margin between DQ and clock for reliable read/write transfers.
• Flexible burst and timing options: Programmable burst lengths (2, 4, 8) and defined speed-grade timing (‑6T) simplify system timing trade-offs.
• SSTL_2‑compatible I/O: 2.5 V I/O signaling compatibility supports integration with standard DDR interface environments.
• Compact commercial TSOP package: 66‑TSSOP footprint offers a longer‑lead TSOP option for improved assembly reliability in space-constrained designs.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8P-6T:F offers a straightforward DDR SDRAM solution where a 512 Mbit, 64M × 8 organization and parallel DDR interface are required. Its combination of source-synchronous DQS, DLL timing alignment, and programmable burst lengths provides predictable performance for system designers focused on timing control and throughput.

This device is suited to designs targeting commercial temperature ranges and 2.3 V–2.7 V supply domains that need a compact 66‑pin TSSOP package. It provides long-term value through configurable timing options and industry-standard DDR features useful across a range of embedded and consumer applications.

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