MT46V64M8P-6T:D TR
| Part Description |
IC DRAM 512MBIT PAR 66TSOP |
|---|---|
| Quantity | 664 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V64M8P-6T:D TR – IC DRAM 512MBIT PAR 66TSOP
The MT46V64M8P-6T:D TR is a 512 Mbit volatile DDR SDRAM organized as 64M × 8 with a parallel memory interface. It delivers DDR-class timing characteristics with a 167 MHz clock frequency and a 700 ps access time.
Packaged in a 66-TSSOP (0.400", 10.16 mm width) and supporting a 2.3 V to 2.7 V supply, the device is suited for designs that require compact, low-voltage parallel DRAM with defined timing and operating conditions (0 °C to 70 °C TA).
Key Features
- Core / Technology DDR SDRAM volatile memory organized as 64M × 8 for a total capacity of 512 Mbit.
- Performance Operates at a 167 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page).
- Interface Parallel memory interface for direct connection to compatible system architectures.
- Power Low-voltage operation with a supply range of 2.3 V to 2.7 V.
- Package 66-TSSOP (0.400", 10.16 mm width) package for compact board-level integration.
- Operating Conditions Specified ambient temperature range of 0 °C to 70 °C (TA).
Unique Advantages
- High memory density: 512 Mbit capacity in a 64M × 8 organization provides substantial on-board DRAM storage.
- Predictable timing: 167 MHz clock and 700 ps access time enable consistent memory performance and timing analysis.
- Low-voltage operation: 2.3 V to 2.7 V supply range supports lower power budgets in system designs.
- Space-efficient package: 66-TSSOP footprint minimizes PCB area while retaining a standard TSOP form factor.
- Straightforward integration: Parallel interface and defined timing parameters simplify integration into compatible memory subsystems.
Why Choose MT46V64M8P-6T:D TR?
The MT46V64M8P-6T:D TR combines 512 Mbit DDR SDRAM capacity with defined timing (167 MHz clock, 700 ps access) and low-voltage operation (2.3–2.7 V) in a compact 66-TSSOP package. These characteristics make it a suitable choice for designs that require a parallel DRAM device with predictable electrical and timing behavior within the specified ambient temperature range.
Its combination of density, timing data, and packaging supports streamlined board-level integration for projects where size, supply voltage, and deterministic memory performance are key considerations.
Request a quote or submit a procurement inquiry to obtain pricing and availability for the MT46V64M8P-6T:D TR.
