MT46V64M8P-75 IT:D

The MT46V64M8P-75 IT:D is a 512 Mbit volatile memory device implemented as DDR SDRAM with a 64M × 8 organization. It provides parallel memory interface operation with a 133 MHz clock frequency and timing characteristics suitable for systems requiring fast, byte-wide DRAM storage.

Offered in a 66‑TSSOP package and supporting a supply range of 2.3 V to 2.7 V and an operating temperature range of -40 °C to 85 °C, this device is intended for designs that require compact, mid-density volatile memory with defined electrical and timing specs.

Key Features

• Core / Memory Architecture DDR SDRAM technology with a 64M × 8 memory organization delivering a total of 512 Mbit of volatile storage.
• Performance 133 MHz clock frequency and an access time of 750 ps combined with a write cycle time (word page) of 15 ns for predictable timing behavior.
• Interface Parallel memory interface designed for byte-wide DRAM operation and system memory expansion.
• Power Operates from a 2.3 V to 2.7 V supply range to support low-voltage system designs.
• Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package for compact board-level footprint.
• Operating Range Rated for ambient temperatures from -40 °C to 85 °C (TA) to cover a broad thermal envelope.

Typical Applications

• System memory and buffering — Used as parallel DDR SDRAM for systems that require 512 Mbit of volatile storage and fast read/write cycles.
• Embedded controllers — Provides byte-wide memory capacity in compact board footprints where a 66‑TSSOP package is required.
• Industrial electronics — Supports designs needing operation across -40 °C to 85 °C with a defined low-voltage supply range.

Unique Advantages

• High-density 512 Mbit capacity: 64M × 8 organization consolidates memory requirements into a single device.
• Defined timing performance: 133 MHz clock and 750 ps access time with a 15 ns write cycle time (word page) for consistent system timing design.
• Low-voltage operation: 2.3 V to 2.7 V supply range enables integration into low-voltage platforms.
• Compact package: 66‑TSSOP footprint (10.16 mm width) minimizes board area for space-constrained designs.
• Wide ambient temperature support: -40 °C to 85 °C rating extends usability across a broad thermal range.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The IC DRAM 512MBIT PARALLEL 66TSOP (MT46V64M8P-75 IT:D) positions itself as a mid-density DDR SDRAM option that balances compact packaging, defined high-speed timing, and low-voltage operation. Its 64M × 8 organization and 512 Mbit capacity make it suitable for designs that need reliable, byte-wide volatile memory in a small form factor.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory with explicit electrical and timing parameters, and for projects that require a consistent operating range from -40 °C to 85 °C. The combination of package, voltage range, and timing simplifies integration into systems where board space and predictable performance are priorities.

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