MT46V64M8P-75:D

The MT46V64M8P-75:D is a 512 Mbit DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 64M × 8 and operates with a 133 MHz clock frequency.

Designed for board-level memory implementations, the device offers defined timing and electrical characteristics for designs that require a parallel DDR memory solution in a 66-TSSOP package.

Key Features

• Memory Core & Technology DDR SDRAM technology in a DRAM memory format; memory organization of 64M × 8 giving a total capacity of 512 Mbit.
• Performance & Timing Rated clock frequency of 133 MHz with an access time of 750 ps and a write cycle time (word page) of 15 ns.
• Power Supply voltage range specified from 2.3 V to 2.7 V.
• Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for surface-mount board integration.
• Operating Conditions Commercial operating temperature range of 0°C to 70°C (TA).
• Interface & Mounting Parallel memory interface; device is volatile DRAM intended for board-mounted applications.

Typical Applications

• Embedded memory for parallel systems — Use as on-board DDR memory where a parallel DDR interface and 512 Mbit capacity are required.
• Board-level memory expansion — Integrate into PCB designs needing a 64M × 8 DRAM organization in a 66-TSSOP footprint.
• Commercial electronics — Suitable for designs operating in the 0°C to 70°C temperature range with a 2.3 V–2.7 V supply.

Unique Advantages

• Defined DDR SDRAM architecture: Provides standard DDR SDRAM behavior with a 64M × 8 organization for predictable memory mapping.
• Compact TSOP footprint: 66-TSSOP (0.400", 10.16 mm width) package supports surface-mount board layouts where space and package profile are considerations.
• Specified timing parameters: 133 MHz clock frequency, 750 ps access time, and 15 ns write cycle time give clear timing targets for system integration.
• Narrow supply range: 2.3 V–2.7 V supply voltage specification helps define power delivery and decoupling requirements in the system design.
• Commercial temperature support: Rated for 0°C to 70°C operation for designs targeting commercial temperature environments.

Why Choose MT46V64M8P-75:D?

The MT46V64M8P-75:D positions itself as a straightforward 512 Mbit DDR SDRAM component for designs requiring a parallel memory interface and clear electrical and timing specifications. Its 64M × 8 organization, 133 MHz clock rating, and defined access and cycle times make it suitable for board-level memory implementations where those exact parameters are required.

Manufactured in a 66-TSSOP package and operating within a 2.3 V–2.7 V supply range and 0°C–70°C temperature window, the device is appropriate for commercial electronic designs that need a compact, specified DRAM solution from an established memory supplier.

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