MT46V64M8P-6T IT:F TR

The MT46V64M8P-6T IT:F TR is a 512 Mbit volatile DDR SDRAM formatted as 64M × 8 with a parallel memory interface. It implements a double-data-rate architecture with two data accesses per clock and supports source‑synchronous data capture using DQS and a DLL for alignment.

Targeted for board-level memory subsystems that require 512 Mbit DDR storage in a 66‑TSSOP package, this device offers industrial temperature operation (−40°C to +85°C) and a VDD range of 2.3 V to 2.7 V for system-level flexibility.

Key Features

• Core / Architecture Internal pipelined DDR architecture providing two data accesses per clock cycle; differential clock inputs (CK, CK#) and DLL for timing alignment.
• Memory Organization 512 Mbit capacity organized as 64M × 8 with four internal banks for concurrent operation and programmable burst lengths of 2, 4, or 8.
• Performance & Timing Rated for a 167 MHz clock frequency (DDR), with an access time of 700 ps and a write cycle time (word page) of 15 ns (speed grade -6T timing).
• Data I/O and Strobes Bidirectional data strobe (DQS) transmitted/received with data; DQS edge-aligned for READs and center-aligned for WRITEs to support source‑synchronous capture.
• Refresh and Power Management Auto refresh and self refresh supported (self refresh not available on AT devices); 8192-cycle refresh provided per datasheet refresh options.
• Voltage & I/O Compatibility VDD supply range 2.3 V to 2.7 V and 2.5 V I/O (SSTL_2 compatible) for common DDR signaling levels.
• Package & Mounting 66‑TSSOP (0.400", 10.16 mm width) plastic package for board-level mounting; longer‑lead TSOP option noted for improved reliability.
• Temperature Range Industrial operating temperature: −40°C to +85°C (TA).

Typical Applications

• Industrial memory subsystems Fits systems requiring DDR SDRAM operation across an industrial temperature range (−40°C to +85°C).
• Board-level DDR expansion Provides 512 Mbit density in a 66‑TSSOP footprint for designs using parallel DDR memory interfaces.
• Embedded controllers and modules Used where a 64M × 8 DDR memory with programmable burst lengths and source‑synchronous capture is required.

Unique Advantages

• DDR source‑synchronous capture: DQS and DLL support align data and strobe for reliable read/write timing at DDR rates.
• Industrial temperature rating: Specified operation from −40°C to +85°C supports deployments in harsher environment conditions.
• Compact TSOP package: 66‑TSSOP footprint enables higher density board layouts while providing longer‑lead TSOP option for improved reliability.
• Flexible timing and burst control: Programmable burst lengths (2/4/8) and four internal banks enable adaptable access patterns for system requirements.
• SSTL_2 compatible I/O: 2.5 V I/O compatibility supports common DDR signaling standards at the device interface.
• Verified DDR timing grades: Speed grade -6T supports operation at 167 MHz clock rate with specified data‑out and access windows.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8P-6T IT:F TR positions itself as a purpose-built 512 Mbit DDR solution for designs that need DDR parallel memory density in a board‑level TSOP package with industrial temperature capability. Its DDR architecture, DQS/DLL timing features, and programmable burst lengths make it suitable for systems requiring predictable, source‑synchronous memory behavior.

This device is appropriate for engineers specifying 64M × 8 DDR memory with a 2.3 V–2.7 V supply, 167 MHz clock operation, and a compact 66‑TSSOP footprint where industrial temperature operation and standard DDR signaling compatibility are required.

Request a quote or submit a request for pricing and availability to discuss how the MT46V64M8P-6T IT:F TR fits your design and production needs.