MT46V64M8P-5B:D TR

The MT46V64M8P-5B:D TR is a 512 Mbit volatile DRAM organized as 64M × 8 using DDR SDRAM technology with a parallel memory interface. It delivers 200 MHz clock operation and is offered in a 66‑TSSOP package (10.16 mm width), making it suitable for systems that require compact, high-density parallel DRAM.

Key attributes such as a 2.5–2.7 V supply range, 700 ps access time, and a specified operating temperature of 0 °C to 70 °C provide a clear performance and environmental profile for embedded and board-level memory subsystems.

Key Features

• Memory Core DDR SDRAM architecture; organized as 64M × 8 for a total memory size of 512 Mbit.
• Interface Parallel memory interface supporting synchronous DDR operation at a clock frequency of 200 MHz.
• Performance & Timing 700 ps access time and a write cycle time (word page) of 15 ns provide defined timing characteristics for system design.
• Power Specified supply voltage range of 2.5 V to 2.7 V to match 2.5 V DDR system power rails.
• Package 66‑TSSOP package (0.400", 10.16 mm width) for board-level mounting where a slim-profile TSOP footprint is required.
• Operating Range Ambient operating temperature specified from 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory subsystems — Used as parallel DDR storage where 512 Mbit volatile memory is required on board-level designs.
• Consumer and computing modules — Integration into modules or PCBs that require a compact 66‑TSSOP DDR memory footprint.
• Control and interface boards — For systems that leverage a parallel DDR interface with defined timing and 2.5 V supply rails.

Unique Advantages

• 512 Mbit density — Provides a substantial memory capacity in a single 64M × 8 device suitable for higher-capacity board designs.
• Defined DDR timing — 200 MHz clock frequency and 700 ps access time give predictable performance characteristics for memory timing budgets.
• Compact TSOP footprint — 66‑TSSOP package (10.16 mm width) supports space-constrained PCB layouts.
• 2.5 V DDR compatibility — Operates within a 2.5–2.7 V supply range to match common 2.5 V DDR system rails.
• Specified operating limits — Operating temperature range of 0 °C to 70 °C provides clear environmental boundaries for design validation.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

IC DRAM 512MBIT PARALLEL 66TSOP (MT46V64M8P-5B:D TR) is positioned for designs that require a compact, high-density parallel DDR memory device with defined timing and power characteristics. Its 64M × 8 organization, 200 MHz clock capability, and 700 ps access time offer measurable performance parameters for system architects and hardware engineers.

Choose this device when your design needs a 512 Mbit volatile memory solution in a 66‑TSSOP package with a 2.5–2.7 V supply and an ambient operating range of 0 °C to 70 °C. The clear, specification-driven profile aids in predictable integration and validation in board-level memory subsystems.

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