MT46V64M8P-5B L IT:J

The MT46V64M8P-5B L IT:J is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface in a 66‑TSSOP package. It implements Double Data Rate (DDR) SDRAM architecture with internal DLL and source‑synchronous DQS for aligned data capture and supports industrial temperature operation.

Designed for systems requiring low‑voltage DDR memory, the device targets embedded and industrial applications that need 512 Mbit of volatile storage with iterative refresh control, programmable burst lengths and up to 200 MHz clock operation (speed grade -5B).

Key Features

• Core Architecture 
  Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data accesses per clock cycle and a DLL for timing alignment.
• Memory Organization 
  512 Mbit capacity configured as 64M × 8 with four internal banks (16M × 8 × 4 banks as specified in the datasheet).
• Performance / Timing 
  Speed grade -5B supports clock rates up to 200 MHz (CL = 3). Access time listed at 700 ps and write cycle time (word page) of 15 ns.
• Data Interface 
  Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous data capture; DQS edge‑aligned for READs and center‑aligned for WRITEs.
• Power 
  VDD and VDDQ supply range of 2.5 V ±0.2 V (datasheet notes VDD = +2.5 V ±0.2 V and DDR400 option at 2.6 V ±0.1 V for specific grades).
• Refresh and Burst Control 
  Auto refresh (8K refresh count) and programmable burst lengths of 2, 4, or 8; self refresh support noted in the datasheet.
• Package and Reliability 
  66‑TSSOP package (0.400", 10.16 mm width) with a longer‑lead TSOP option for improved reliability; industrial temperature rated (−40°C to +85°C TA).

Typical Applications

• Industrial Control Systems 
  Provides 512 Mbit volatile storage for industrial controllers and instrumentation operating across −40°C to +85°C.
• Embedded Memory Expansion 
  Used as system DRAM in embedded platforms that require a parallel DDR interface and moderate density memory.
• Communications and Networking Equipment 
  Suitable for buffering and temporary storage in networking modules that use parallel DDR SDRAM with programmable burst modes.

Unique Advantages

• Industrial Temperature Rating: Supports −40°C to +85°C operation, enabling use in temperature‑sensitive industrial environments.
• DDR Source‑Synchronous Operation: Bidirectional DQS with DLL alignment improves timing margin for READ and WRITE operations in parallel DDR systems.
• Flexible Performance Scaling: Speed grade -5B supports up to 200 MHz clocking (CL = 3) while providing documented timing windows and access parameters.
• Low‑Voltage I/O: 2.5 V VDD/VDDQ operation (SSTL_2 compatible per datasheet) reduces power and supports common DDR I/O standards in legacy systems.
• Programmable Burst and Refresh: Burst lengths of 2/4/8 and 8K auto‑refresh simplify data transfer patterns and refresh management for sustained operation.
• Compact TSOP Package: 66‑TSSOP footprint (10.16 mm width) for board‑level density with a longer‑lead TSOP option noted for improved reliability.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B L IT:J combines DDR SDRAM architecture, industrial temperature operation and a compact 66‑TSSOP package to deliver 512 Mbit of parallel DDR memory suitable for embedded and industrial designs. Its source‑synchronous DQS, internal DLL, and programmable burst modes provide predictable timing behavior for systems requiring deterministic memory transfers.

This device is appropriate for engineers specifying low‑voltage (2.5 V) DDR memory at up to 200 MHz clock rates who need industrial temperature capability, documented timing parameters, and a TSOP package option for board integration. The combination of capacity, timing options and package makes it a practical choice for memory expansion in legacy and industrial DDR applications.

Request a quote or submit a pricing inquiry to evaluate the MT46V64M8P-5B L IT:J for your next design project.