MT46V64M8P-5B IT:J

The MT46V64M8P-5B IT:J is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66-pin TSSOP package. It implements a pipelined double-data-rate architecture with source-synchronous data capture to deliver two data accesses per clock cycle.

Designed for industrial-temperature systems, this device provides defined timing and electrical characteristics for board-level DRAM applications that require a documented DDR memory solution with a 2.5 V I/O supply and a 66‑TSSOP footprint.

Key Features

• Core Architecture Internal pipelined DDR architecture enabling two data transfers per clock cycle and a DLL to align DQ/DQS with clock signals.
• Memory Organization 512 Mbit capacity configured as 64M × 8 with four internal banks (16 Meg × 8 × 4 banks configuration).
• Performance & Timing 200 MHz clock frequency (–5B speed grade) with a 700 ps access time and a 5 ns cycle time (CL = 3) delivering a 1.6 ns data‑out window at the rated speed grade.
• Data Integrity & Capture Bidirectional data strobe (DQS) transmitted/received with data, DQS edge-aligned for reads and center-aligned for writes, plus data mask (DM) support for masked writes.
• Refresh & Power Modes Auto refresh and self-refresh support with standard 8K refresh cycle options; self-refresh availability noted in the datasheet options.
• Burst & Command Flexibility Programmable burst lengths of 2, 4, or 8 and commands entered on each positive CK edge; concurrent auto-precharge option supported.
• Electrical Supply VDD/VDDQ nominal operation at 2.5 V with specified supply range 2.5 V to 2.7 V and SSTL_2 compatible I/O levels.
• Package 66‑pin TSSOP (0.400", 10.16 mm width) standard package for board-level placement and routing.
• Industrial Temperature Rating Rated for −40°C to +85°C (TA) per the IT temperature option.

Typical Applications

• Industrial Embedded Systems Board-level DDR memory for industrial designs requiring operation across −40°C to +85°C and documented timing/electrical parameters.
• DDR Memory Subsystems Component for memory subsystems and modules that use parallel DDR SDRAM organized as 64M × 8.
• System Designs Requiring Defined Timing Suitable where specified clock rate (200 MHz), access time (700 ps), and burst timing (2/4/8) are required for deterministic memory behavior.

Unique Advantages

• 512 Mbit Density: Provides high-density on-board DRAM in a single 66‑TSSOP package for compact designs.
• DDR Source-Synchronous Capture: Bidirectional DQS and DLL alignment improve data capture timing and simplify timing closure at the memory interface.
• Industrial Temperature Support: Specified for −40°C to +85°C, addressing applications that require extended ambient operating range.
• Flexible Burst and Refresh Options: Programmable burst lengths and standard auto/self-refresh modes enable tuning for performance and power management.
• Standardized Package Footprint: 66‑TSSOP packaging eases board-level integration and mechanical design reuse.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The IC DRAM 512MBIT PARALLEL 66TSOP (MT46V64M8P-5B IT:J) is positioned for designs that require a documented 512 Mbit DDR SDRAM device with defined timing, source‑synchronous data capture, and industrial temperature capability. Its combination of DDR architecture, programmable burst lengths, and a standard 66‑TSSOP footprint makes it suitable for board-level memory implementations where predictable electrical and timing specifications are needed.

Designers and procurement teams will find clear, datasheet-backed specifications for clock rate, voltage, access time, and package dimensions to support integration, qualification, and long-term BOM stability in industrial embedded memory designs.

If you need pricing, availability, or technical ordering information for MT46V64M8P-5B IT:J, request a quote or contact sales to discuss lead times and quantities.