MT46V64M8P-5B IT:J TR

The MT46V64M8P-5B IT:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate architecture with source‑synchronous data strobe and internal DLL to support high-speed, board‑level memory designs.

Targeted at systems requiring compact, industrial‑temperature volatile memory, this device provides DDR performance at up to a 200 MHz clock rate (DDR400 timing grade) while operating across an extended temperature range suitable for industrial applications.

Key Features

• Core / DDR Architecture Internal pipelined DDR architecture enabling two data transfers per clock cycle; differential clock inputs (CK/CK#) and DLL for timing alignment.
• Memory Organization & Capacity 512 Mbit capacity organized as 64M × 8 with four internal banks to support concurrent bank operation.
• Performance & Timing Speed grade -5B supporting a 200 MHz clock rate (DDR400 timing), access window down to 700 ps and write cycle time (word page) of 15 ns.
• Data Path & Transfer Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; data mask (DM) for write masking; programmable burst lengths of 2, 4, or 8.
• Power & I/O VDD / VDDQ supply options of +2.5 V ±0.2 V (family typical) with 2.5 V I/O compatible with SSTL_2 signaling.
• Refresh & Reliability Auto refresh and self refresh capability noted in the device family; standard 8192 refresh cycles for commercial and industrial parts.
• Package & Temperature Range 66‑pin TSSOP (0.400", 10.16 mm width) long‑lead TSOP option for improved reliability; industrial operating temperature −40 °C to +85 °C (TA).

Typical Applications

• Industrial embedded systems — Board‑level volatile memory for controllers and embedded platforms requiring extended temperature operation.
• Legacy/parallel DDR designs — Direct replacement or integration for systems using parallel DDR SDRAM in a TSSOP package.
• PCB memory expansion — Compact TSOP footprint for adding high‑speed DDR memory to compact or space‑constrained PCBs.

Unique Advantages

• DDR performance at DDR400 timing: The -5B speed grade supports a 200 MHz clock rate enabling two transfers per clock for higher throughput compared with single‑data‑rate parts.
• Source‑synchronous data capture: DQS transmitted/received with data and DLL alignment improves timing margin for read/write operations.
• Industrial temperature rating: Specified operation from −40 °C to +85 °C supports deployment in temperature‑challenged environments.
• Compact, board‑friendly package: 66‑TSSOP package offers a small footprint and long‑lead option for enhanced assembly reliability.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and four internal banks allow designers to tune performance for application access patterns.

Why Choose MT46V64M8P-5B IT:J TR?

This MT46V64M8P‑5B IT device positions itself as a compact, industrial‑temperature DDR SDRAM solution for designs that require parallel DDR memory with verified timing features such as DQS, DLL, and programmable burst lengths. Its 64M × 8 organization and 512 Mbit capacity provide a predictable memory footprint for board‑level memory expansion and embedded system integration.

Engineers seeking a TSSOP‑packaged DDR memory with industrial temperature capability and DDR400 timing options will find the MT46V64M8P‑5B IT suitable for robust, space‑constrained designs where standard 2.5 V DDR I/O and source‑synchronous operation are required.

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