MT46V64M8P-5B AIT:J

The MT46V64M8P-5B AIT:J is a 512 Mbit DDR SDRAM organized as 64M x 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements an internal, pipelined double-data-rate architecture with source‑synchronous data capture and is offered in an automotive-grade qualification.

Designed for embedded and automotive applications that require compact, high‑speed volatile memory, this device delivers DDR operation at up to 200 MHz, a wide operating temperature range, and automotive AEC‑Q100 qualification for system reliability.

Key Features

• Core / Architecture Internal pipelined DDR architecture providing two data accesses per clock cycle with a DLL for DQ/DQS alignment and differential clock inputs (CK/CK#).
• Memory 512 Mbit total capacity organized as 64M × 8 with four internal banks and programmable burst lengths of 2, 4, or 8.
• Performance & Timing Supports a clock frequency up to 200 MHz (speed grade -5B) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Data Path Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture and a data mask (DM) for write masking.
• Power / I/O Operates from a 2.3 V to 2.7 V supply with 2.5 V I/O (SSTL_2 compatible as documented in the datasheet options).
• Reliability & Qualification AEC‑Q100 qualification and automotive grade marking support usage in automotive-grade designs; refresh and self‑refresh options are defined in the datasheet.
• Package & Temperature 66‑pin TSSOP (0.400", 10.16 mm width) package with specified operating temperature range of –40 °C to +85 °C (TA).

Typical Applications

• Automotive Systems Automotive electronic subsystems that require automotive‑qualified DDR memory for buffering and temporary data storage, supported by AEC‑Q100 qualification.
• Embedded Controllers Embedded designs needing a compact parallel DDR memory device in a 66‑TSSOP footprint for program and data buffering.
• Industrial Control Industrial equipment and control modules that benefit from wide operating temperatures and robust DDR memory for real‑time data handling.

Unique Advantages

• AEC‑Q100 Automotive Qualification: Enables deployment in automotive-grade designs where supplier qualification is required.
• High-Speed DDR Operation: 200 MHz clock rate (DDR) supporting doubled data transfers per cycle for improved throughput.
• Compact TSOP Package: 66‑pin TSSOP (0.400", 10.16 mm) provides a small form factor for space-constrained PCB layouts.
• Robust Temperature Range: Specified for –40 °C to +85 °C (TA) to support demanding environmental conditions.
• Flexible Memory Interface: Parallel DDR interface with programmable burst lengths and four internal banks for concurrent operation.
• Optimized Signal Timing: DLL alignment, bidirectional DQS, and differential clock inputs simplify source‑synchronous timing and data capture.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B AIT:J positions itself as a compact, automotive‑qualified DDR SDRAM option for designs that require reliable, high‑speed volatile memory in a small package. Its 64M × 8 organization, DDR architecture, and 200 MHz operation provide the performance characteristics needed for buffering and transient data storage in embedded and automotive systems.

Backed by Micron’s documented DDR SDRAM feature set (DLL, DQS source‑synchronous capture, programmable burst lengths, and internal banks), this device is suitable for engineers seeking a verified memory building block that combines performance, package density, and automotive qualification.

If you would like pricing, lead-time details, or to request a formal quote for the MT46V64M8P-5B AIT:J, please contact sales or submit a quote request.