MT46V64M8FN-6:F TR

The MT46V64M8FN-6:F TR is a 512 Mbit DDR SDRAM device configured as 64M × 8 with a parallel memory interface and a 60-ball FBGA package. It implements a double-data-rate architecture that provides two data transfers per clock and is targeted at designs requiring synchronous volatile DRAM.

Key device characteristics include a 167 MHz clock frequency (DDR333 speed grade), 700 ps access time, programmable burst lengths, and a compact 60-TFBGA (10 mm × 12.5 mm) footprint, making it suitable for space-constrained memory subsystems operating within commercial temperature ranges.

Key Features

• Core Architecture — DDR SDRAM: Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and DLL support are included to align data timing.
• Memory Density & Organization: 512 Mbit total capacity organized as 64M × 8 with four internal banks for concurrent operation.
• Timing & Performance: Specified for a 167 MHz clock (DDR333 / -6 speed grade) with an access time of 700 ps and a write cycle time (word page) of 15 ns; supports programmable burst lengths of 2, 4, or 8.
• Data Integrity & I/O: Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture, data mask (DM) for write masking, and SSTL_2 compatible 2.5 V I/O behavior as described in the datasheet.
• Power Supply: Operates from a supply range of 2.3 V to 2.7 V (VDD / VDDQ nominally centered around 2.5 V as listed in the datasheet).
• Memory Management: Supports auto refresh and the documented refresh counts; self-refresh option referenced in the datasheet (availability dependent on device option).
• Package & Temperature: 60-TFBGA (60-ball FBGA, 10 mm × 12.5 mm) package and commercial operating temperature range of 0°C to +70°C.

Typical Applications

• DDR memory subsystems: Use as synchronous volatile DRAM for systems that require 512 Mbit DDR SDRAM in a parallel interface form factor.
• Compact board-level designs: Suitable where a 60-ball FBGA footprint is required to save PCB area while providing 512 Mbit storage.
• System buffering and working memory: Appropriate for designs needing programmable burst lengths and source-synchronous data capture for high-throughput transfers.

Unique Advantages

• High-density 512 Mbit capacity: Provides substantial memory in a single 60-ball FBGA device, simplifying board routing and BOM.
• DDR architecture with source-synchronous DQS: Two data transfers per clock and DQS-linked capture improve data throughput and timing robustness at DDR333 speeds.
• 167 MHz (DDR333) timing grade (-6): Enables operation at the documented clock rate with defined CAS latency characteristics for deterministic timing design.
• Compact FBGA package: 60-TFBGA (10 mm × 12.5 mm) offers a small footprint for space-constrained applications.
• Standard commercial temperature and supply: Designed for 0°C to +70°C operation with a 2.3–2.7 V supply range, matching common system power rails.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V64M8FN-6:F TR delivers a proven DDR SDRAM architecture in a 512 Mbit density, balancing performance and footprint for systems that require parallel DDR memory at DDR333 timing. Its combination of source-synchronous DQS, programmable burst lengths, and a small 60-ball FBGA package makes it a practical choice where compact, synchronous volatile memory is needed.

Manufactured by Micron Technology, Inc., this device is suited to engineers specifying a commercial-temperature DDR SDRAM with defined timing parameters, clear power requirements, and a compact board-level package.

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