MT46V64M8FN-6 IT:F

The MT46V64M8FN-6 IT:F is a 512 Mbit volatile DDR SDRAM device organized as 64M × 8 with a parallel memory interface in a 60‑ball TFBGA (10 mm × 12.5 mm) package. It implements an internal pipelined double-data-rate architecture with bidirectional DQS and differential clock inputs for source‑synchronous data capture.

Designed for board‑level memory integration, the device targets applications that require compact packaging, a nominal clock frequency of 167 MHz, 700 ps access time, and operation across an extended ambient temperature range of -40 °C to +85 °C. Supply voltage range is 2.3 V to 2.7 V.

Key Features

• Core Architecture  Internal, pipelined DDR architecture providing two data accesses per clock cycle; supports four internal banks for concurrent operation.
• Memory Configuration  512 Mbit capacity organized as 64M × 8 with parallel memory interface and programmable burst lengths (2, 4, 8).
• Performance  Clock frequency rated at 167 MHz with a 700 ps access time and a 15 ns write cycle time (word page).
• Data I/O and Timing  Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; differential clock inputs (CK/CK#) and DLL alignment of DQ/DQS to CK.
• Power and I/O  Supply voltage range of 2.3 V to 2.7 V; 2.5 V I/O signaling compatibility per datasheet definitions.
• Refresh and Reliability  Supports auto refresh (8K refresh cycles) and self‑refresh options as described in the device family datasheet.
• Package  60‑ball TFBGA (60‑FBGA, 10 mm × 12.5 mm) compact package for reduced board area.
• Operating Temperature  Industrial ambient range of -40 °C to +85 °C (TA).

Typical Applications

• Board‑level memory expansion  Provides 512 Mbit of parallel DDR SDRAM in a compact 60‑FBGA package for systems that require added volatile memory on the PCB.
• Embedded and industrial equipment  Industrial temperature rating (-40 °C to +85 °C) and standard DDR signaling make it suitable for embedded controllers and industrial modules.
• High‑speed buffering and data staging  DDR architecture, 167 MHz clocking and source‑synchronous DQS enable use as a buffer or intermediate storage in high‑throughput designs.

Unique Advantages

• DDR pipelined architecture  Two data accesses per clock cycle increase effective throughput compared with single‑rate DRAM of equivalent clocking.
• Compact 60‑FBGA package  10 mm × 12.5 mm 60‑ball TFBGA provides a small board footprint for space‑constrained designs.
• Industrial temperature support  Rated for -40 °C to +85 °C ambient operation for deployment in temperature‑sensitive environments.
• Predictable timing  167 MHz clock frequency and 700 ps access time provide clear performance targets for memory subsystem timing and layout.
• Standard DDR features  DQS signaling, differential clock inputs and DLL alignment simplify high‑speed data capture and timing closure.
• Wide supply range  2.3 V to 2.7 V supply window accommodates nominal 2.5 V operation and related I/O requirements.

Why Choose MT46V64M8FN-6 IT:F?

The MT46V64M8FN-6 IT:F combines a 512 Mbit DDR SDRAM organization with a compact 60‑FBGA package and industrial temperature support, delivering a balanced solution for designers who need reliable, board‑level volatile memory with defined timing characteristics. Its DDR architecture and source‑synchronous DQS support enable predictable high‑speed data transfer and simpler timing closure.

This device is suited to designs that require a mid‑capacity parallel DDR memory with compact packaging, clear electrical and timing parameters, and extended ambient temperature operation. The specification set supports straightforward integration into memory subsystems where footprint, timing, and industrial temperature range are primary considerations.

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